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Optical device and optical apparatus

A technology of optical devices and optical equipment, applied in the direction of laser devices, semiconductor laser devices, lasers, etc., can solve the problems of reduced heat dissipation performance, difficult installation steps, low thermal conductivity, etc., and achieve the reduction and suppression of the polarization ratio of TE mode The effect of light intensity reduction

Inactive Publication Date: 2011-08-24
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this case, when the semiconductor laser 220 is installed so that the GaAs substrate side of the laser faces the support substrate 230, since the GaAs substrate has very low thermal conductivity, heat dissipation performance is reduced, which makes it difficult to keep the multi-wavelength laser sufficient. long life
On the contrary, when the semiconductor laser 220 is mounted so that the side of the GaAs substrate faces the semiconductor laser 210, a mounting step that allows individual driving in each wavelength band becomes difficult to perform.

Method used

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  • Optical device and optical apparatus
  • Optical device and optical apparatus
  • Optical device and optical apparatus

Examples

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no. 1 example

[0043] figure 1 An example of the cross-sectional structure of the semiconductor laser device 1 (optical device) according to the first embodiment of the present invention is shown. The semiconductor laser device 1 includes a semiconductor laser 20 (optical element) provided on a support 10 . The welding layer 30 is provided between the support body 10 and the semiconductor laser 20 for bonding the support body 10 and the semiconductor laser 20 to each other.

[0044] The support body 10 is provided on the supply surface 21B (first surface) side of the semiconductor laser 20 as will be described later. For example, the support body 10 may be a heat sink or a sub-mount that supports the semiconductor laser 20, and the support body may alternatively be an optical element such as a semiconductor laser. The heat sink or submount functions as a heat dissipation member that dissipates heat generated by the semiconductor laser 20 . For example, the heat sink may be formed from a ...

no. 2 example

[0060] Figure 7 An example of a cross-sectional structure of a semiconductor laser device 2 (optical device) according to a second embodiment of the present invention is shown. The semiconductor laser device 2 is identical in structure to the semiconductor laser device 1 of the above-described embodiment in that a semiconductor laser 20 (optical device) is provided on a support 10 with a fusion layer 30 interposed therebetween. In contrast, the semiconductor laser device 2 differs in configuration from the semiconductor laser device 1 of the above-described embodiment in that a fusing layer 30 is provided between the support body 10 and the semiconductor laser 20 in a region facing at least the light emitting region 21A. Furthermore, the semiconductor laser device 2 is also different from the semiconductor laser device 1 of the above embodiment in that the anti-deformation layer 31 is provided between the region of the surface 21B of the laser portion 21 facing the light emit...

no. 3 example

[0067] [structure]

[0068] Figure 10 An example of a cross-sectional structure of a semiconductor laser device 3 (optical device) according to a third embodiment of the present invention is shown. The semiconductor laser device 3 is preferably used as a light source of an optical disc device (optical device) for recording and reproducing an optical disc.

[0069] The semiconductor laser device 3 is provided by sequentially stacking a semiconductor laser 20 and a semiconductor laser 40 on a support base 50, and the device functions as a multi-wavelength laser. The semiconductor lasers 20 and 40 are chip-form semiconductor lasers, and the lateral width of the semiconductor laser 40 (the width of the laser in a direction perpendicular to its resonator direction) is larger than that of the semiconductor laser 20 . The semiconductor lasers 20 and 40 are overlapped so that their respective end faces (not shown) on the light exit side thereof are arranged on the same plane. The ...

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Abstract

The invention provides an optical device and optical apparatus. The optical device includes: an optical element having a first light-emitting region in the vicinity of a first surface and a first metal layer in contact with at least a region of the first surface which does not face the first light-emitting region; a support body disposed on the side of the optical element toward which the first surface faces; and a fuse-bonding layer disposed between the first surface and the support body and in a region which does not face the first light-emitting region, the fuse-bonding layer bonding the first metal layer and the support body.

Description

technical field [0001] The present invention relates to an optical device comprising a plurality of optical elements contained in the same package and an optical device having such an optical device. Background technique [0002] Semiconductor lasers utilizing nitride-type III-V compound semiconductors (typical such compounds include GaN, AlGaN, and GaInN crystals, and such semiconductors are therefore referred to as "GaN-type semiconductors") provide an oscillation wavelength of around 400 nm (e.g. , 405nm), which is regarded as the wavelength limit of optical discs recordable and reproducible using existing optical systems. Therefore, such semiconductors are used as light sources of recording / reproducing apparatuses of next-generation optical discs such as Blu-ray discs. [0003] Most recording / reproducing apparatuses of next-generation optical discs are compatible with various optical disc formats, thereby satisfying the needs of the market. Specifically, these devices ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/022H01S5/40
CPCH01S5/02272H01S5/0224H01S5/0226H01S5/0216H01S5/4087H01S5/32341H01L2224/16145H01L2224/48463H01S5/0234H01S5/0236H01S5/0237
Inventor 伴野纪之
Owner SONY CORP