Submicron waveguide type Ge quantum well electro-optic modulator
An electro-optical modulator and quantum well technology, applied in the field of optoelectronics, can solve the problem of no waveguide type Ge quantum well modulator, etc., and achieve the effects of small coupling loss, reduced junction capacitance, and reduced power consumption
Inactive Publication Date: 2011-08-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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However, the current Ge quantum well modulators are all vertical incidence structures, so far, there is still no waveguide Ge quantum well modulator reported
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[0027] See figure 1 As shown, the present invention provides a submicron waveguide type Ge quantum well electro-optic modulator, including:
[0028] An SOI substrate 10, the SOI substrate comprising a silicon substrate, a silicon dioxide layer fabricated on the silicon substrate and a silicon waveguide layer fabricated on the silicon dioxide layer, the width of the silicon waveguide layer is smaller than that of the dioxide The width of the silicon layer;
[0029] A buffer layer 11, the buffer layer 11 is fabricated on the middle part of the silicon waveguide layer on the SOI substrate 10, the length of the buffer layer 11 is less than the length of the silicon waveguide layer, the material of the buffer layer 11 is Ge; the buffer layer 11 The role is to help release stress and defects in the epitaxial growth process;
[0030] A dummy substrate 12, the dummy substrate 12 is fabricated on the buffer layer 11, the material of the dummy substrate 12 is N-type doped Si 1-y Ge y ;
[0031...
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The invention relates to a submicron waveguide type Ge quantum well electro-optic modulator, which comprises a SOI (silicon on insulator) substrate, a buffer layer, a virtual substrate, an active area and a cover layer, wherein the SOI substrate comprises a silicon substrate, a silicon dioxide layer arranged on the silicone substrate, and a silicon waveguide layer arranged on the silicon dioxide layer; the width of the silicon waveguide layer is less than the width of the silicon dioxide layer; the buffer layer is arranged in the middle part of the silicon waveguide layer on the SOI substrate; the length of the buffer layer is less than the length of the silicon waveguide layer; the virtual substrate is arranged on the buffer layer; the active area is arranged on the virtual substrate; the cover layer is arranged on the active area; a modulation area is formed by the buffer layer, the virtual substrate, the active area and the cover layer; and the modulation area and the silicon waveguide layer on the SOI substrate both have submicron-level width.
Description
Technical field [0001] The invention belongs to the technical field of optoelectronics, and invents an electro-optical modulator, especially a sub-micron waveguide type Ge quantum well electro-optical modulator. Background technique [0002] Waveguide type electro-optical modulator is an important element to realize optical signal encoding output. In order to be compatible with the traditional Si-based CMOS technology, the waveguide-type Si-based electro-optic modulator is of great significance for the realization of optoelectronic integration. Traditional waveguide-type Si-based electro-optic modulators are all electrical refractive index modulators based on the plasma dispersion effect in Si. However, the plasma dispersion effect is a relatively weak modulation effect. In order to increase the modulation efficiency and convert the phase modulation to the intensity modulation, a special optical structure is required. Common optical structures include MZI interferometer and mic...
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IPC IPC(8): G02F1/017
Inventor 赵红卫胡炜玄成步文王启明
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI