Flexible-substrate-based solid super capacitor and manufacturing method thereof

A technology for supercapacitors and flexible substrates, which is applied to capacitor parts and other directions, and can solve problems such as heavy weight and difficult substrate bending

Inactive Publication Date: 2011-09-07
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this nanocapacitor has the advantages of high power and high energy density, its substrate is not easy to bend, heavy and other shortcomings limit its wide application.

Method used

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  • Flexible-substrate-based solid super capacitor and manufacturing method thereof
  • Flexible-substrate-based solid super capacitor and manufacturing method thereof
  • Flexible-substrate-based solid super capacitor and manufacturing method thereof

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Embodiment Construction

[0029] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0030] Step 1: Please refer to figure 1 , the flexible substrate 200 is put into an electron beam evaporation system or a magnetron sputtering system to deposit a layer of adhesive 201, wherein 200 is polytetrafluoroethylene (Teflon), and the thickness is 200 microns; 201 is titanium, and the thickness is 200 μm. 1 to 10 nanometers.

[0031] Step 2: Please refer to figure 2 , deposit a layer of metal 202 (with a purity of 99.99%) on the surface of 201 through an electron beam evaporation system, wherein 202 is aluminum with a thickness of 1-2 microns.

[0032] Step 3: Please refer to image 3 , 203 is obtained by traditional two-time anodizing on 202, of which 203 is alumina. Here, the process conditions of the two anodizing processes are the same, both using a concentration of 0.3M and a temperature of 0 o C sulfuric acid solution, app...

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Abstract

The invention discloses a solid super capacitor adopting a flexible material as a substrate. The solid super capacitor provided by the invention is manufactured by a simple process, relatively lower in cost, light in weight and folding, and simultaneously achieves high energy density and high power density. A manufacturing method for the solid super capacitor comprises the following steps of: (1) depositing a layer of adhesive on the flexible substrate; (2) depositing a layer of metal aluminum film on the adhesive; (3) performing anodic oxidation twice on the aluminum film to obtain a single-pass aluminum oxide template; (4) deposing a layer of metal as a lower electrode on the surface of a pore space of the aluminum oxide template; (5) depositing a layer of insulating medium on the surface of the lower electrode; (6) depositing a layer of metal as an upper electrode on the surface of the insulating medium; and (7) depositing a layer of metal as a top current collector on the surface of the upper electrode.

Description

technical field [0001] The invention belongs to the technical field of energy storage devices, and in particular relates to a solid supercapacitor using a flexible material as a substrate and a manufacturing method thereof. Background technique [0002] Among electronic devices for energy storage, solid-state supercapacitors have attracted extensive attention due to their simultaneous high energy density and high power density. The basic idea of ​​solid-state supercapacitors is to first form a porous structure with a large surface area, and then use this porous structure as a preparation template to form a metal / insulator / metal (MIM) type capacitor. Based on this idea, researchers have used anodized aluminum [1] and silicon deep groove structures to prepare solid supercapacitors for more than ten years. In these solid-state supercapacitors, the substrate material is mainly glass, heavily doped silicon wafer or metal aluminum foil. Although this nanocapacitor has the advant...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/004
CPCY02E60/13
Inventor 丁士进李连杰
Owner FUDAN UNIV
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