Stress GeOI structure and forming method thereof

Abstract

The invention provides a stress GeOI structure comprising a silicon substrate, a Ge layer, a grid stack, a channel region, a drain region, a source region, and a plurality of shallow trench isolation (STI) structures, wherein the surface of the silicon substrate is provided with an oxide insulating layer; the Ge layer is formed on the oxide insulating layer, and a first passivation thin layer is formed between the Ge layer and the oxide insulating layer; the grid stack is formed on the Ge layer, the channel region is formed under the grid stack, and the drain region and the source region are formed on two sides of the channel region; and the plurality of STI structures penetrate through the oxide insulating layer and extend into the silicon substrate, and insulating medium materials introducing strain are filled in the STI structures so as to lead the channel region to generate strain. In the embodiment of the invention, the first passivation layer is used for improving the problem ofinterfacial state between the Ge material and the insulated oxide, thus reducing the leakage and scattering at the interface.

Description

technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a strained GeOI (Ge on insulator) structure and a forming method thereof. Background technique [0002] For a long time, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been following the so-called Moore's law (Moore's law), and its working speed is getting faster and faster. However, for Si-based material itself As far as it is concerned, it is already close to the double limit of physics and technology. Therefore, various methods have been proposed in order to continuously improve the performance of MOSFET devices, and thus the development of MOSFET devices has entered a so-called post-Moore (More-Than-Moore) era. High-mobility channel engineering based on heterogeneous material structures, especially high-carrier mobility material systems such as Si-based Ge materials, is one of the effective technologies. For e...

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Problems solved by technology

[0004] The purpose of the present invention is to solve at least one of the above-mentioned technical defects, especially the defect that the interface state between Ge and the oxide insulator in the current GeOI structure is very poor, and the defect that the Ge layer is difficult to form strain

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