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Coating and developing apparatus and developing method

A technology of a developing device and a developing method, which is applied in the field of coating-developing device and developing, can solve the problems of increased processing cost and large amount of developer evaporation, and achieve the effect of suppressing the reduction of productivity

Active Publication Date: 2011-09-21
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the substrate is heated by the heating plate and its temperature is adjusted, the amount of evaporation of the developer solution during processing is large, and the processing cost may increase.

Method used

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  • Coating and developing apparatus and developing method
  • Coating and developing apparatus and developing method
  • Coating and developing apparatus and developing method

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0053] First, a coating-developing apparatus 1 to which the developing system of the present invention is applied will be described. figure 1 A plan view showing a resist pattern forming system in which an exposure device C4 is connected to a coating-developing device 1, figure 2 is a perspective view of the system. also, image 3 is a longitudinal sectional view of the system. In this coating-developing apparatus 1, a transfer area C1 is provided, and a transfer arm 12 takes out a wafer W from a closed carrier C placed on a stage 11 and transfers it to a processing area C2, and the transfer arm 12 transfers the wafer W from the processing area C2 to the processing area C2. The zone C2 receives the processed wafer W and returns it to the carrier C.

[0054] Such as figure 2 As shown, in the above-mentioned processing area C2, in this example, the first area (DEV layer) B1 for performing the development process, the first area (DEV layer) B1 for performing the forming pro...

no. 2 Embodiment approach

[0087] then, Figure 12 Another configuration example of the first area (DEV layer) B1 is shown. In this example, the components of the shelf unit U1 are constituted as a developing unit 101 . In addition, a unit corresponding to the first developing unit 20 is configured as a cleaning processing unit 2A. The cleaning processing unit 2A has the same configuration as the developing unit 20 except that four sets of cleaning units 7 are arranged in the horizontal direction and no developing unit 2 is provided.

[0088] Respectively refer to as longitudinal section side view, transverse section top view Figure 13 , Figure 14 , to describe the differences between the developing unit 101 and the developing unit 2. In the developing unit 101 , the interior of the frame 102 is partitioned up and down by a partition plate 103 , and a cooling plate 105 is provided on the upper side of the partition plate 103 . The cooling plate 105 is formed in a substantially circular shape and ...

no. 3 Embodiment approach

[0092] Next, about Figure 15 Still another example of the configuration of the first block B1 shown will be described focusing on differences from the first embodiment. exist Figure 15 In the first block B1 of , a developing unit 20A is provided instead of the developing unit 20 , and a transport member 111 for transporting the wafer W from the developing unit 2 to the cleaning unit 7 is provided on the developing unit 20A. Figure 16 A perspective view showing the inside of the housing 21 of the developing unit 20A. A guide 112 extending along the arrangement direction of the cleaning assembly 7 and the developing assembly is formed on the base 23 . The horizontal movement part 113 constituting the transport member 111 moves horizontally along the extending direction of the guide 112 . A lift unit 114 configured to be able to move up and down is connected to the horizontal movement unit 113 , and a transport arm 115 is provided on the lift unit 114 . The transport arm 1...

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Abstract

The present disclosure provides a coating and developing apparatus capable of forming a liquid film of a developing solution on an entire surface of a substrate with high uniformity and achieving high throughput, and the present disclosure also provides a developing method. The coating and developing apparatus comprises: a developing module; a cleaning module; and a transfer mechanism configured to transfer a substrate developed by the developing module to the cleaning module, wherein the developing module includes: an airtightly sealed processing vessel configured to form a processing atmosphere therein; a temperature control plate that is provided in the processing vessel and mounts thereon the substrate and cools the substrate; an atmosphere gas supply unit configured to supply an atmosphere gas including mist of a developing solution to a surface of the substrate within the processing vessel, and a temperature control unit for adjusting the temperature of the temperature control plate to the temperature for making the atmosphere gas dew on the substrate. The developing module and the cleaning module can concurrently perform to obtain high throughput.

Description

technical field [0001] The present invention relates to a coating-developing device for forming a resist film on a substrate and developing the exposed substrate, a developing method, and a storage medium. Background technique [0002] In the photoresist process, which is one of the semiconductor manufacturing processes, a resist is applied on the surface of a semiconductor wafer (hereinafter referred to as a wafer), and the resist is exposed in a predetermined pattern and then developed. A resist pattern is formed. In general, such a process is performed by a system connected to an exposure device in a coating-development apparatus that performs coating-development of a resist. In the development process of the conventional photoresist (hereinafter referred to as resist) installed in the developing unit of the above-mentioned coating-developing device, the photoresist coated with the photoresist is exposed in a predetermined pattern from the nozzle. The wafer surface is s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/30H01L21/00
CPCH01L21/6715H01L21/67748H01L21/67178H01L21/6719H01L21/67745H01L21/68785G03B27/52G03F7/3021H01L21/68742H01L21/0274
Inventor 滝口靖史山本太郎有马裕吉原孝介吉田勇一
Owner TOKYO ELECTRON LTD
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