Growth method for sapphire crystals and crystal growth furnace structure for growing sapphire crystals

Abstract

The invention relates to a growth method for sapphire crystals and a crystal growth furnace structure for growing the sapphire crystals. The growth method comprises the following steps of: a, mixing 40 to 60 weight percent of aluminum oxide crystals, 20 to 30 weight percent of aluminum oxide crystal blocks and 10 to 30 weight percent of aluminum oxide crystal grains uniformly, and putting the mixture into a crucible; b, putting the crucible with the aluminum oxide crystals into the crystal growth furnace, vacuumizing, and heating the crystal growth furnace to 2,200 DEG C; c, heating the aluminum oxide crystals in the crucible until the aluminum oxide crystals are in a molten state, reducing the temperature of the crucible to between 2,150 and 2,200 DEG C, and starting to lead the crystals when a solid-liquid interface is formed in the crucible; d, reducing the temperature of the crucible to between 1,900 and 2,100 DEG C to grow the crystals; e, maintaining the temperature of the crystal growth furnace; f, annealing the crystal growth furnace; and h, breaking vacuum by argon in the crystal growth furnace, starting the crystal growth furnace and taking the sapphire crystals out. In the growth method, process steps are simple, the processing is convenient, and the method is energy-saving, environment-friendly, high in applicability, safe and reliable.

Description

technical field [0001] The present invention relates to a growth method of sapphire crystal and a crystal growth furnace structure for sapphire crystal growth, in particular to a growth method of single crystal sapphire (alumina single crystal) and a crystal growth furnace structure for growth, belonging to sapphire crystal technology field. Background technique [0002] At present, the application of single crystal sapphire substrates in modern technology products is very important. Taking light-emitting diodes (LEDs) in the optoelectronic industry as an example, Gallium Nitride (GaN) The substrate (Substrate), so the crystal growth is not good, and p-type gallium nitride is not easy to make, so the progress is slow. These problems continued until 1983. Dr. S. Yoshida of Japan and others used nitride When aluminum (AlN) is grown on a sapphire substrate at high temperature as a buffer layer, and then gallium nitride is grown on it, the crystallization is better. Later, Prof...

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Problems solved by technology

It is a melt single crystallization method induced by oriented crystals, including a crucible, a heating element and a shielding device placed in a simple bell-type vacuum resistance furnace. However, there is molybdenum pollution in the crystal growth process of this method, and other impurities are mainly introduced by raw materials. , it is necessary to use high-purity raw materials

[0010] The single crystal sapphire grown by the above sapphire growth method has impurity pollution, or its crystal quality and size are limited, it is difficult to meet the high performance requirements of optical, semiconductor, communication and other components, the cost is high, and the high temperature growth takes a long time. lack of

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