Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing InxAl1-xN composite barrier GaN-enhanced field-effect transistor

A technology of inxal1-xn and compound potential barrier, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as unstable performance of field effect transistors, threats to reliability of field effect transistors, and low process controllability , to achieve the effects of increasing the two-dimensional electron gas density, reducing etching damage, and improving controllability and stability

Active Publication Date: 2011-10-12
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
View PDF2 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mobility of fluoride ions at high temperature poses a potential threat to the reliability of field effect transistors, and the high concentration of negative ions reduces the current density when working with positive grid voltage
Conventional methods based on AlGaN / GaN heterostructures to realize GaN enhanced field effect transistors are difficult to meet the needs of large-scale applications due to low process controllability and unstable performance of field effect transistors.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing InxAl1-xN composite barrier GaN-enhanced field-effect transistor
  • Method for manufacturing InxAl1-xN composite barrier GaN-enhanced field-effect transistor
  • Method for manufacturing InxAl1-xN composite barrier GaN-enhanced field-effect transistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018]Choose GaN as the buffer layer 14, grow 15nm undoped GaN as the channel layer 15, and then grow a 0.7nm undoped Al0.5Ga0.5N insertion layer 16 and a 5nm undoped In0.25Al0.75N lower barrier on it layer 17, and then grow a 1nm undoped AlN insertion layer 18, and finally cover an 8nm undoped In0.17Al0.83N upper barrier layer 19. Self-consistently solving the Schrödinger equation and Poisson equation, the channel electron gas density is as high as 2.04×1013cm-2, which not only reduces the series resistance, but also greatly increases the tunneling probability and reduces the ohmic contact resistance because the total barrier thickness is only 14.7nm. When removing the upper barrier layer 19 of In0.17Al0.83N and the AlN insertion layer 18, the calculation shows that no two-dimensional electron gas is formed under zero gate pressure, and the enhanced working mode is realized. Since the trench depth is only 9nm, and the AlN insertion layer can The selection ratio of the etching...

Embodiment 2

[0020] Select Al0.04Ga0.96N as the buffer layer 14, grow 15nm undoped GaN as the channel layer 15, and then grow a 0.8nm undoped Al0.7Ga0.3N insertion layer 16 and a 5nm undoped In0.25Al0. 75N lower barrier layer 17, then grow 1nm undoped AlN insertion layer 18, and finally cover 8nm undoped In0.17Al0.83N upper barrier layer 19. Self-consistently solving the Schrödinger equation and Poisson equation, the channel electron gas density is as high as 1.9×1013cm-2, which not only reduces the series resistance, but also greatly increases the tunneling probability and reduces the ohmic contact resistance because the total barrier thickness is only 14.8nm. When removing the upper barrier layer 19 of In0.17Al0.83N and the AlN insertion layer 18, the calculation shows that no two-dimensional electron gas is formed under zero gate pressure, and the enhanced working mode is realized. Since the trench depth is only 9nm, and the AlN insertion layer can The selection ratio of the etching pro...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for manufacturing an InxAl1-xN composite barrier GaN-enhanced field-effect transistor. The process comprises the following steps: growing a nucleation layer, an AlxGa1-xN buffer layer, a GaN channel layer, an AlxGa1-xN insertion layer and a high-In InxAl1-xN lower barrier layer on a substrate sequentially; and then growing an AlxGa1-xN insertion layer and coveringa low-In InxAl1-xN upper barrier layer to form a composite barrier; manufacturing a source electrode and a drain electrode on the composite barrier and removing the InxAl1-xN upper barrier layer and the AlxGa1-xN insertion layer by a microelectronic process in a region reserved for manufacturing a grid electrode; and manufacturing the grid electrode. The method has the advantages of improving thecontrollability of the GaN-enhanced field-effect transistor, reducing the grid leakage current when the transistor works under positive grid voltage and increasing the field-effect transistor output current density.

Description

technical field [0001] What the present invention relates to is a kind of manufacturing In x Al1- x The invention relates to a method for an N composite potential barrier GaN enhanced field effect transistor, which belongs to the technical field of semiconductor field effect transistors. Background technique [0002] GaN material has a strong polarization effect. Even if the conventional AlGaN / GaN heterostructure is not doped, it can obtain a two-dimensional electron gas with a surface density of up to 1013cm-2, which is a natural n-channel depletion field effect tube. At present, there are two main methods to realize the enhanced field effect transistor based on the AlGaN / GaN heterostructure. One is the trenching technology, which thins the AlGaN barrier layer by trenching and uses the surface potential to deplete the two-dimensional electron gas. In this structure, to ensure the output current density of the field effect tube, the Al composition in the barrier layer is ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/336H01L21/28
Inventor 孔月婵薛舫时周建军董逊陈辰
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD