Preparation method of gallium nitride single crystal

Abstract

The embodiment of the invention discloses a preparation method of gallium nitride single crystal, comprising the following steps of: growing gallium nitride crystal columns on island-shaped part of a passivation layer having the island-shaped part exposing a plurality of foreign substrates before forming a thick gallium nitride film on the plurality of foreign substrates so as to form a column-shaped network type stress yielding layer; and continuously growing thick gallium nitride film on the stress yielding layer. The column-shaped network type stress yielding layer has relatively weak mechanical intensity, and the gallium nitride structure grown on the foreign substrates can be cracked at the stress yielding layer under the effect of thermal stress in a cooling process; therefore, the thick gallium nitride film is peeled from the foreign substrates. Through the thermal stress in the cooling process, the thick gallium nitride film can be peeled without using other technical processes. The preparation method has low manufacturing cost and easy realization.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, more specifically, to a preparation method of gallium nitride single crystal. Background technique [0002] The third-generation semiconductor materials are also called wide-bandgap semiconductors because their energy bandgap is generally greater than 3.0 electron volts. Compared with traditional silicon-based and gallium arsenide-based semiconductor materials, wide bandgap semiconductors, such as silicon carbide (SiC), gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN), etc., due to Its unique band gap range, excellent optical and electrical properties and excellent material properties can meet the working requirements of high-power, high-temperature, high-frequency and high-speed semiconductor devices. Wide application prospects. [0003] Gallium nitride is an excellent wide-bandgap semiconductor material, ideal for making light-emitting diodes and lasers that emit...

AI Technical Summary

Problems solved by technology

[0007] However, the above-mentioned problem of forming the GaN thick film is that when the heterogeneous substrate is peeled off from the GaN thick film, an off-line method is usually used, that is, a certain thickness of GaN is grown on the heterogeneous substrate. After gallium single crystal, gallium nitride is peeled off from the heterogeneous substrate by other process methods, such as laser lift-off method, etc. These off-line manufacturing methods require specific equipment and specific processes to complete, and the manufacturing cost is very high , is not conducive to large-scale industrial production

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