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Method for manufacturing electrochemical element electrode, electrochemical element electrode, and electrochemical element

A technology of electrochemical components and manufacturing methods, applied in the direction of electrode manufacturing, electrolyte storage battery manufacturing, hybrid/electric double layer capacitor manufacturing, etc., can solve problems such as difficult to eliminate bumping, short circuit between positive and negative electrodes, and difficult to eliminate, to achieve reliable removal, Improvement of wettability and avoidance of internal short circuit

Inactive Publication Date: 2011-10-19
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The bumping of the vapor deposition material is considered to be caused by impurities in the vapor deposition material put into the crucible and uneven temperature in the crucible. Although bumping can be reduced, it is difficult to eliminate
In particular, it is difficult to eliminate bumping when film formation is performed for a long time while replenishing the evaporating material
[0007] If a battery is manufactured using electrodes with protrusions, if the protrusions on the electrode surface are thicker than the separator (thickness: about 20 μm), the protrusions may penetrate the separator and cause an internal short circuit between the positive and negative electrodes.

Method used

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  • Method for manufacturing electrochemical element electrode, electrochemical element electrode, and electrochemical element
  • Method for manufacturing electrochemical element electrode, electrochemical element electrode, and electrochemical element
  • Method for manufacturing electrochemical element electrode, electrochemical element electrode, and electrochemical element

Examples

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Embodiment

[0108] Examples are disclosed below to further describe the present invention in detail, but the present invention is not limited to these Examples.

[0109] First, for the purpose of producing a negative electrode plate of a non-aqueous electrolyte secondary battery, a first step was implemented on the assumption that a Si thin film was formed on a negative electrode current collector.

[0110] That is, in figure 1 In the shown device structure, roughened copper foil (EXP-DT-NC35 μm; manufactured by Furukawa Copper Foil Co., Ltd.) with a width of 28 cm was used as the substrate, and the position of the shielding plate was adjusted so that the thin film forming part (23 ) is about 45cm in length. The thin film formation source (19) which put high-purity Si (99.9% purity) into the graphite crucible was installed so that the shortest distance from the thin film formation part (23) was 40 cm. at 10 -2 Under the decompression condition of about Pa, heat and melt Si by electron ...

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Abstract

Provided is a method for easily and surely removing a protrusion from the surface of an active material layer formed during a vacuum process upon production of an electrochemical element electrode. The method for manufacturing an electrochemical element electrode includes: a first step which uses a vacuum process to form on a collector, an active material layer which can occlude and emit lithium; a second step which makes the active material layer to occlude the lithium; and a third step which removes the protrusion from the surface of the active material layer which has occluded the lithium.

Description

technical field [0001] The present invention relates to a method for producing an electrode for an electrochemical element that can be used in a lithium secondary battery and an electrochemical capacitor, an electrode for an electrochemical element, and an electrochemical element. Background technique [0002] In recent years, portable devices have been miniaturized and multifunctional, and accordingly, batteries that serve as power sources for portable devices are eagerly desired to have higher capacities. The theoretical capacity of carbon mainly used as the negative electrode active material is 372mAh / g. Silicon with a theoretical capacity of 4200mAh / g is expected to be seen as an active material capable of achieving higher capacity than carbon. Therefore, electrode materials mainly composed of silicon and structures of electrode materials mainly composed of silicon have been studied. [0003] One of them is an active material layer formed as a film mainly composed of s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/139H01G9/058H01M4/13H01M4/134H01M4/1395C23C14/24C23C14/58H01G9/00H01G11/06H01G11/22H01G11/24H01G11/30H01G11/86H01M10/058
CPCH01G11/28H01G11/50H01G11/70H01G11/86H01M4/0421H01M4/134H01M4/1395H01M4/485Y02E60/10Y10T428/24355Y02P70/50Y02E60/13
Inventor 神山游马本田和义篠川泰治柳智文
Owner PANASONIC CORP
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