Photoetching projection objective wave aberration detection method based on space image frequency spectrum

A technology for projecting objective lenses and aerial images, which can be used in microlithography exposure equipment, testing optical properties, and exposure devices for photoengraving processes, and can solve problems such as increased cost and decreased versatility.

Active Publication Date: 2011-11-09
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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Problems solved by technology

However, the detection mark of this technology needs to be specially designed, which increases the cost and reduces the versatility

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  • Photoetching projection objective wave aberration detection method based on space image frequency spectrum
  • Photoetching projection objective wave aberration detection method based on space image frequency spectrum
  • Photoetching projection objective wave aberration detection method based on space image frequency spectrum

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Embodiment Construction

[0069] The present invention will be further described below in conjunction with the embodiments and accompanying drawings, but the protection scope of the present invention is not limited by these embodiments.

[0070] see first figure 1 , figure 1 It is a structural schematic diagram of the wave aberration detection system of the lithography machine projection objective lens based on the aerial image spectrum adopted in the present invention. As can be seen from the figure, the projection objective wave aberration detection system based on aerial image spectrum centering adopted in the present invention includes an illumination source 1, an illumination system 2, a test mask 3, a mask table 4 carrying a test mask 3, a test mask The test marks 5 on the mold, the projection objective lens 6, the workpiece table 7, the aerial image sensor 8 installed on the workpiece table, and the data processing computer 9 connected with the workpiece table. The aerial image sensor can scan...

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Abstract

The invention relates to a photoetching projection objective wave aberration detection method based on a space image frequency spectrum, which is characterized in that the space image centering and the wave aberration solving are carried out through frequency spectrum matching. The method provided by the invention comprises the following steps: 1) computing the simulation space images corresponding to different Zernike aberration combinations by utilizing photoetching simulation software PROLITH and carrying out the Fourier transform on each space image; 2) carrying out the principal component analysis on simulation space image frequency spectrum sets and establishing a regression matrix between the principal component coefficients and the Zernike coefficients through linear regression analysis; 3) operating the space image acquisition program of a photoetching machine and finishing the acquisition of actual-measurement space images; 4) centering the actual-measurement space images by utilizing a frequency spectrum centering method and modifying the frequency spectrum of the actual-measurement space images into the frequency spectrum corresponding to ideal position space images; and 5) computing the wave aberration of a projection objective. The photoetching projection objective wave aberration detection method provided by the invention can avoid the errors caused by space image difference values, simplifies the testing procedures and improves the testing accuracy.

Description

technical field [0001] The invention relates to an in-situ detection technology for the wave aberration of a projection objective lens of a lithography machine, in particular to a detection method for the wave aberration of a lithography projection objective lens based on an aerial image spectrum. Background technique [0002] The projection objective lens is one of the core components of the lithography machine system. Waveform aberration in projection objectives can degrade image quality and reduce the process window, reducing yield. Among all the wave aberrations, the odd aberration causes the shift of the imaging position, and leads to the asymmetry of the line width of the imaging pattern, which increases the CD non-uniformity. Idol differences reduce the effective depth of focus and cause differences in the best focal planes between patterns of different periods. As the feature size of lithography continues to decrease, the aberration tolerance of the projection obje...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01M11/02
Inventor 彭勃王向朝杨济硕闫观勇徐东波
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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