Method for extracting parameters of bipolar transistor and equivalent circuit of bipolar transistor

Abstract

The invention discloses a method for extracting parameters of a bipolar transistor and an equivalent circuit of the bipolar transistor. The method comprises the following steps: performing direct current test and S parameter test on the bipolar transistor; and performing curve fitting by use of ADS (Application Development System) software and origin software so as to acquire parameters of the bipolar transistor. The equivalent circuit established based on the method for extracting the parameters of the bipolar transistor comprises three inductors, five capacitors, six resistors and an intrinsic module BJT (Bipolar Junction Transistor), wherein the intrinsic module BJT comprises two resistors, three charge controls and three current controls. The method can be used for establishing bipolar transistor equivalent circuits suitable for circuits in different conditions, and also can be used for establishing the bipolar transistor equivalent circuit for high-frequency circuits. The bipolartransistor equivalent circuit established based on the method can reflect the device characteristics of a group of working points of the bipolar transistor, and can be used for circuit simulation of different situations; and the equivalent circuit can reflect the high frequency characteristic of the bipolar transistor, and can be used for high frequency circuit simulation.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and further relates to a method for extracting parameters of bipolar transistors in the technical field of semiconductor devices and an equivalent circuit thereof. This method can be used to extract the parameters of bipolar transistors, and the equivalent circuit of bipolar transistors established by this method can be used to build circuits and simulate actual circuits. Background technique [0002] At present, in the field of semiconductor devices, there are two commonly used bipolar transistor parameter extraction methods: one is to extract parameters through the size and structure of bipolar transistors, and the other is to use the DC and AC parameters of bipolar transistors. Test for parameter extraction. Commonly used bipolar transistor equivalent circuits are GP equivalent circuits and VBIC equivalent circuits. [0003] Shanghai Huahong NEC Electronics Co., Ltd. discloses a bip...

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that it can only fit the equivalent circuit parameters of one operating point of bipolar transistors, and the equivalent circuit of bipolar transistors established based on this method can only reflect the device characteristics of one operating point of bipolar transistors

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