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Method for adjusting work function of metal gate applied to N-channel metal oxide semiconductor (NMOS) device

An adjustment method and metal gate technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve good thermal stability, good adjustment of metal gate work function, and easy industrialization

Active Publication Date: 2013-07-24
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

However, there are still many problems to be solved when metal gates are integrated on high-K gate dielectrics, such as thermal stability problems, interface state problems, especially the Fermi pinning effect, which makes it difficult to obtain the appropriate low threshold voltage required by nano-CMOS devices. big challenge

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  • Method for adjusting work function of metal gate applied to N-channel metal oxide semiconductor (NMOS) device

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Embodiment Construction

[0025] The present invention utilizes the physical vapor deposition (PVD) method to deposit a layer of metal nitride film or metal film on high-K medium such as HfLaOH, HfSiON, etc., as the metal gate electrode, and then adopts the ion implantation method to carry out the metal gate electrode Doping, for NMOS devices, the selected ion implantation elements are Tb, or Er, or Yb, or Sr and other elements, and then the doped metal ions are driven into the interface between the metal gate electrode and the high-K gate dielectric by high-temperature thermal annealing Stacks are formed on the substrate or dipoles are formed on the interface between the high-K gate dielectric and SiO2 through interfacial reactions, resulting in changes in the gate work function. The amount of change is related to the metal gate material and the type of dopant ions, the profile distribution of the concentration and the reaction with the interface. Optimizing the energy, dose, and heat treatment condit...

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Abstract

A method for adjusting a metal gate work function of an NMOS device is provided, which mainly comprises the following steps: depositing a layer of metal nitride film or metal film on a high K dielectric by physical vapor deposition (PVD) method, as a metal gate electrode; then implanting metal ions, such as Tb,Er,Yb or Sr, into the metal gate electrode by use of ion implantation method; and carrying out rapid thermal annealing to drive doped metal ions onto the interface between the metal gate and the high-K gate dielectric, in order to adjust the metal gate work function. The method can be simply and easily realized, can improve capability of adjusting the metal gate work function, and is compatible with the CMOS process.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a method for adjusting the metal gate work function of NMOS devices, which is suitable for the preparation and application of high-performance nanoscale complementary metal oxide semiconductor (CMOS) devices of 45 nanometers and below. Background technique [0002] As the feature size of CMOS devices enters the 45nm technology node and below, in order to greatly reduce the gate tunneling current and gate resistance, eliminate the polysilicon depletion effect, improve device reliability, and alleviate the Fermi level pinning effect, adopt High K (dielectric constant) / metal gate material instead of traditional SiO 2 / poly-Si (polysilicon) structure has become the consensus of the industry. However, there are still many problems to be solved when metal gates are integrated on high-K gate dielectrics, such as thermal stability problems, interface state problems, especially th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
CPCH01L29/4966H01L21/28176H01L21/3215H01L21/823842H01L29/495H01L29/517
Inventor 徐秋霞许高博
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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