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Method for manufacturing crystal grain assembly

A manufacturing method and grain technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as the impact of output yield

Active Publication Date: 2013-08-14
ADVANCED SEMICON ENG INC
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  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the biggest disadvantage of the wafer-to-wafer (WtW) stacking process is that the output will be affected by the yield rate of the upper and lower wafers. For example, the yield rates of the two wafers to be stacked are respectively 50% and 100%, even if one of the wafers has a higher yield, after the two wafers are directly stacked on each other, the yield of qualified products is only 50%, and the yield loss (Yield Loss) is as high as 50%

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  • Method for manufacturing crystal grain assembly
  • Method for manufacturing crystal grain assembly
  • Method for manufacturing crystal grain assembly

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Embodiment Construction

[0008] refer to Figure 1 to Figure 15 , is a schematic diagram showing various process steps of the manufacturing method of the die assembly of the present invention. refer to figure 1 , providing an upper wafer 10 and at least a lower wafer 20 . The upper wafer 10 and the lower wafer 20 have been tested, so they all have a wafer map (Wafer Mapping), wherein the upper wafer 10 has several known qualified upper crystal grains (Upper Known Good Die) 11 and several A known unqualified upper grain (Upper Known Bad Die) (not shown in the figure).

[0009] refer to figure 2 , the known qualified upper die 11 has a front side 111 , a back side 112 and several conductive structures 113 . The conductive structures 113 , such as bumps, are located on the front side 111 of the known good upper die 11 .

[0010] Then, cutting the at least one lower wafer 20 to form several lower crystal grains, these lower crystal grains include several known qualified lower crystal grains (Lower K...

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Abstract

The invention relates to a method for manufacturing a crystal grain assembly. The method comprises the following steps: (a) providing a tested upper wafer and at least one lower wafer; (b) cutting the at least one lower wafer, thereby forming a plurality of lower crystal grains containing a plurality of known qualified crystal grains; (c) according to a wafer map of the upper wafer, selecting andrearranging the known qualified crystal grains on a carrier; (d) connecting the upper wafer to the carrier; (e) removing the carrier; and (f) performing a cutting process. The method can be used for ensuring that the crystal grains of the crystal grain assembly are all known qualified crystal grains, thereby avoiding the yield loss caused by different yields of the upper wafer and the lower wafer.

Description

technical field [0001] The present invention relates to a die assembly and a manufacturing method thereof, in particular, to a die assembly manufactured by wafer-to-wafer stacking and a manufacturing method thereof. Background technique [0002] At present, the three-dimensional IC packaging method mainly adopts two stacking technologies: one is wafer-to-wafer (WtW) stacking; the other is chip-to-chip (CtC) stacking or chip-to-wafer (Chip to Wafer, CtW) stack. Compared with chip-to-chip (CtC) stacking or chip-to-wafer (CtW) stacking, wafer-to-wafer (WtW) stacking is a method that can achieve A packaging method with high output and simpler process steps. [0003] However, the biggest disadvantage of the wafer-to-wafer (WtW) stacking process is that the output will be affected by the yield rate of the upper and lower wafers. For example, the yield rates of the two wafers to be stacked are respectively 50% and 100%, even if one of the wafers has a higher yield, after the two...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L21/68H01L21/78
CPCH01L2224/73204H01L2924/15311H01L2924/181H01L2924/00012
Inventor 沈启智陈仁川张惠珊洪嘉临庄英圣
Owner ADVANCED SEMICON ENG INC
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