A method of using uv to realize the separation of wafer and glass

Abstract

The invention discloses a method using UV to separate a wafer and glass. The method comprises the steps that a protective layer is arranged on the surface of the glass; the temporary bonding of the glass and the wafer is realized through a bonding adhesive layer, and a wafer back process is completed; a high temperature resistance protective film and a high reflective film on the surface of the glass are eliminated; and a UV dispergation machine is used to separate the glass and the wafer. According to the method used for separating the wafer and the glass, the bonding adhesive layer is processed by 365nm conventional UV light to realize bonding disassembly; yield loss is prevented in the separation process; the output efficiency is greatly improved; the production cost is reduced; and the method can be applied to a mass production process.

Description

technical field [0001] The invention relates to the technical field of microelectronic packaging, in particular to a wafer processing technology. Background technique [0002] With the development of semiconductor technology, electronic devices are getting smaller and smaller, more and more integrated, more and more functions are included, and the overall performance of devices is getting stronger and stronger, which leads to the production of thin device wafers and thin chips. The processing has become the trend of mass production of ultra-thin products industry, but because of its instability, the temporary bonding and debonding process has been introduced on this basis. [0003] Temporary bonding and debonding has the following advantages: First, the carrier wafer provides mechanical support and protection for the thin device wafer, so that the backside process can be performed with standard device foundry equipment. For ultra-thin device wafers, process processing at th...

AI Technical Summary

Problems solved by technology

[0004] Temporary bonding technology solves the problem of thin wafer holding and fragmentation during the process, but due to many unstable factors during wafer separation, there is also a great risk of fragmentation during wafer separation

At present, the medium processing methods for wafer separation include heat treatment, Zonebond and laser debonding, etc., but there are certain defects.

Among them, heat treatment is neglected by many manufacturers because heating will cause certain warping of the temporary bonding body and certain thermal budget considerations; and Zonebond technology is currently more popular, but the disadvantage is that the pre-soaking time before debonding is relatively long. It is long and wastes a lot of chemical reagents, which affects the yield and cannot achieve mass production; the laser dismantling and bonding process is currently receiving more attention, but the equipment cost is high, and the laser energy may damage the device wafer, limiting The application of laser debonding process

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