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Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method

A micropore and gold electroplating technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as poor operation of semiconductor chips, reduction of bumps and terminal bonding areas, etc.

Inactive Publication Date: 2009-01-07
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0013] When the surface roughness of the bumps increases, even if the height deviation between the bumps and within the bump surface can be suppressed, in the above-mentioned connection process of COG, TCP, and COF, the bumps of the semiconductor chip are bonded by thermocompression bonding or ACF. When bumping and terminal on the film substrate or glass substrate, the bonding area between some bumps and the terminal is also reduced, which may cause malfunction of the semiconductor chip

Method used

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  • Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method
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  • Micro-hole plating and gold bump fabrication method, semiconductor device and semiconductor device fabrication method

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Embodiment 1

[0079] First, as shown in FIG. 3(a), a semiconductor wafer 1 with a diameter of 8 inches having a semiconductor chip including electrode pads 2 and a protective film 3 is formed by conventional techniques. Next, as shown in FIG. 3(b), barrier metal 4 and current thin film 5 are sequentially formed by sputtering. As the barrier metal 4, refractory metals such as Ti, Ti-W, and Ti-N, or their compounds can be used, but Ti-W is used here. In addition, its film thickness was 0.25 μm. In addition, gold was used as the current thin film 5, and the film thickness was 0.3 μm.

[0080] Next, as shown in FIG. 3( c), on the semiconductor wafer 1 formed to the current thin film 5, a film of a positive photoresist 6 with a thickness of 20 μm is formed by a spin coating method, and on the electrode bump 2 Exposure is performed in the protrusion-forming portion of the photoresist 6 to form an opening 6a by development. Here, 710,000 electrode pads are formed, and the area of ​​the opening ...

Embodiment 2

[0093] As mentioned above, as the pitch of bumps becomes narrower, the conductive particles of ACF also tend to become smaller, and there is a strong demand for reducing the surface roughness of bumps. Therefore, in order to further reduce the bump roughness, it was tried to add a pulse current in the opposite direction of the pulse.

[0094] As in Embodiment 1, here, first, as shown in FIG. 3( a ), an 8-inch-diameter semiconductor wafer 1 having a semiconductor chip including electrode pads 2 and a protective film 3 is formed using conventional technology. Next, as shown in FIG. 3(b), barrier metal 4 and current thin film 5 are sequentially formed by sputtering. A refractory metal such as Ti, Ti-W, Ti-N, or a compound thereof can be used as the barrier metal 4, but Ti-W is used here. In addition, its film thickness was 0.25 μm. In addition, gold was used as the current thin film 5, and the film thickness was 0.3 μm.

[0095] Next, as shown in FIG. 3( c), on the semiconduct...

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Abstract

The present invention provides a micro-hole plating method for depositing a gold layer within a micro opening of a photoresist. The method applies a plating current, which is either only a positive pulse current or a positive / negative pulse current having an appropriate waveform, and also uses a gold plating solution containing gold iodide complex ions and a non-aqueous solvent. This plating solution is less toxic, not easily oxidized, and has a long life, thus offering great performance comparable with the cyanide-type gold plating solution. According to this method, unevenness of bump surface, bump height variation in the wafer, and the bump surface roughness are reduced, and the resulting gold bumps have highly reliable conduction. In addition to this, the method is immune to a short circuit among electrodes, which is caused by a crack in the resist.

Description

technical field [0001] The present invention relates to an electroplating method for micropores in which gold electroplating is performed in micropores, a method for forming gold bumps using the method, a method for manufacturing a semiconductor device, and a semiconductor device, in particular to a method for forming bumps. The electroplating method of etc., use low toxicity and have the performance that matches with the gold electroplating that contains cyanide gold complex ion, the gold electroplating solution that contains gold iodide complex ion and non-aqueous solvent, precipitates gold in micropore , forming protruding electrodes (bumps). Background technique [0002] So far, as a method of high-density mounting of semiconductor chips (semiconductor devices), there are TCP (Tape Carrier Package: Tape Carrier Package), COF (Chip On Film: IC packaging on a flexible circuit board), COG (Chip On Glass: IC packaging on glass), etc. These are protruding electrodes called ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/288H01L21/60
CPCH01L2924/01015H01L2924/01082H01L21/2885H01L2924/01019H01L2224/13144H01L2924/01029H01L2224/13099H01L2924/01022C25D7/12H01L24/11H01L2924/01013H01L2924/01024C25D5/18H01L2924/0001H01L24/13H01L2924/01047H01L2924/01079C25D3/48H01L2924/01005H01L2924/01009H01L2924/01033H01L2924/01006H01L2924/10329H01L2924/01074H01L2924/01078H01L2924/01011H01L2924/01073C25D5/022H01L2224/05027H01L2224/05022H01L2224/0508H01L2224/05001H01L2224/05572H01L2224/05166H01L2224/05184H01L2924/00014H01L24/05H01L24/03C25D5/611C25D7/123H01L2924/014H01L2224/05599
Inventor 铃木芳英泽井敬一
Owner SHARP KK
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