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A phase-shift mask optimization method based on abbe vector imaging model

An imaging model and phase-shift mask technology, which is applied in the photoengraving process of the pattern surface, the original for opto-mechanical processing, optics, etc. optimization effect and other issues, to achieve the effect of high accuracy and high optimization efficiency

Inactive Publication Date: 2011-12-07
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

However, the above method is based on the scalar imaging model of the lithography system, so it is not suitable for high NA lithography systems
At the same time, the existing technology does not consider the difference in response of the projection system to the incident light from different point light sources on the light source surface.
However, due to the different incident angles of light at different positions on the light source surface, their effects on the projection system are different. Therefore, there is a large deviation between the image obtained in the air and the actual image obtained by the existing method, which will affect the optimization effect of the mask.

Method used

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  • A phase-shift mask optimization method based on abbe vector imaging model
  • A phase-shift mask optimization method based on abbe vector imaging model
  • A phase-shift mask optimization method based on abbe vector imaging model

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Embodiment

[0155] like Figure 4 As shown, 401 is two point light sources A and B taken on the light source surface. 402 is the x component of the shock response function H of the lithographic projection system at the position y=0 on the pupil for light emitted by different point light sources. 403 is the y component of the shock response function H of the lithographic projection system at the position y=0 on the pupil for the light emitted by different point light sources. 404 is the z component of the shock response function H of the lithographic projection system at the position y=0 on the pupil for light emitted by different point light sources.

[0156] like Figure 5 As shown, 501 is a schematic diagram of the initial binary mask, its critical dimension is 45nm, white represents the light-transmitting region, and its reflectance is 1, and black represents the light-blocking region, its reflectance is 0. The mask pattern is located on the XY plane, and the lines are parallel to t...

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Abstract

The invention provides a phase-shift mask optimizing method based on an Abbe vector imaging model. The method provided by the invention comprises the following steps of: forming a phase difference of 180 DEG through arranging adjacent openings in a three-dimensional phase-shift mask and a phase of a central transmission area; arranging a variable matrix omega and constructing a target function D into a square of an Euler distance between a target figure and an image in optical resist corresponding to the current mask; and guiding the optimization of a phase-shift mask figure by utilizing the variable matrix omega and the target function D. The phase-shift mask which is optimized by using the method is not only suitable for the condition of small NA (Numerical Aperture), but also is suitable for the condition that NA is more than 0.6.

Description

technical field [0001] The invention relates to a phase shift mask optimization method based on an Abbe (Abbe) vector imaging model, and belongs to the technical field of lithographic resolution enhancement. Background technique [0002] The current large-scale integrated circuits are generally manufactured using photolithography systems. The lithography system is mainly divided into four parts: illumination system (including light source and condenser), mask, projection system and wafer. The light emitted by the light source is focused by the condenser and then enters the mask, and the opening part of the mask transmits light; after passing through the mask, the light is incident on the wafer coated with photoresist through the projection system, so that the mask pattern is copied on the wafer. [0003] The current mainstream lithography system is the 193nm ArF deep ultraviolet lithography system. As the lithography technology node enters 45nm-22nm, the critical size of th...

Claims

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Application Information

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IPC IPC(8): G03F1/14G03F1/00
Inventor 马旭李艳秋董立松
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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