Method for improving light emitting efficiency of blue-green LED (Light-Emitting Diode) on silicon substrate

Abstract

The invention provides a method for improving light emitting efficiency of a blue-green LED ((Light-Emitting Diode) on a silicon substrate, belonging to the technical field of growth of a GaN-based LED with Si as a substrate, aiming at solving the technical problem of providing a method capable of improving the light emitting efficiency of the blue-green LED on the silicon substrate. The adopted technical scheme comprises that the method for improving the light emitting efficiency of the blue-green LED on the silicon substrate is carried out according to the following steps of: firstly, taking SiO2 as a bottom layer of a substrate; secondly, taking Si as a second layer of the substrate; and thirdly, growing a GaN layer on the Si layer. In the invention, absorption of a substrate material to blue-green lights is reduced by utilizing interface reflection effects of different materials such as GaN, Si and SiO2, and the light emitting efficiency of the LED can be improved.

Description

technical field [0001] The invention discloses a method for improving the light extraction efficiency of a blue-green LED on a silicon substrate, belonging to the technical field of growing GaN-based LEDs with Si as a substrate. Background technique [0002] The substrate is the cornerstone of the technological development of the semiconductor lighting industry, and the substrate material determines the performance index of the device. Due to the high technical difficulty, only a few companies such as Cree and Nichia have the ability to develop substrate materials. Among them, Cree mainly makes SiC substrates, and Nichia mainly makes sapphire substrates. At present, only sapphire and silicon carbide substrates are used for mass production of GaN epitaxial wafers, and other substrates such as Si and ZnO are still in the stage of research and development or small batch production. [0003] Using Si as a substrate to grow GaN-based LEDs is a technology path that the industry h...

AI Technical Summary

Problems solved by technology

However, there are currently difficulties such as cracks caused by material mismatch, low luminous efficiency, high operating voltage, and poor reliability, and have not been mass-produced.

In addition, the strong absorption of blue-green light by silicon materials leads to low light extraction efficiency of silicon-based LEDs, which is also a major factor affecting Si as an LED substrate material.

Images