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LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof

An LED chip and laser technology, applied in laser welding equipment, manufacturing tools, welding equipment, etc., can solve the problems of heat accumulation, damage, and large energy loss of the device, and achieve the effect of increasing the light-emitting area, improving the light-emitting efficiency and low cost.

Active Publication Date: 2015-05-20
SUZHOU NAFANG TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This type of light-emitting diode has low light extraction efficiency and large energy loss, which in turn will cause a large amount of heat to accumulate in the device, thereby accelerating the aging of the device and greatly reducing its service life
For this reason, R&D personnel at home and abroad have adopted various structural designs such as inverted zigzag and inverted trapezoid to improve the light extraction efficiency of the device, but the manufacturing process is relatively complicated, the cost is high, and the improvement in the light output efficiency of the device is still very limited.
Furthermore, in the manufacturing process of such light-emitting diode chips, the substrate generally needs to be thinned and polished before the splitting operation can be performed. The process is complicated, time-consuming, low in efficiency, and easily leads to irregular fragmentation and damage of epitaxial wafers. , and will produce a large amount of dust to pollute the environment

Method used

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  • LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof
  • LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof
  • LED (Light Emitting Diode) chip with improved light emitting structure and preparation method thereof

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Embodiment 1

[0030] Embodiment 1 refers to Figure 1-2 , the LED chip includes a sapphire substrate 1 with a GaN-based epitaxial layer 2 grown on the front side, the thickness of the substrate is more than 80 μm, preferably about 100 μm, and it includes a first part 11 and a second part 12 arranged in layers, wherein the first part 11 is a rectangular structure, the lower part of the second part 12 is also a rectangular structure, but its upper part is a quadrangular truss structure, and the sides of the quadrangular truss form an angle β with the vertical direction, 10°≤ β≤45°. Obviously, the LED chip has a light-extracting area and light-extracting efficiency far exceeding that of the common rectangular LED chip or the recently appeared inverted trapezoidal LED chip.

[0031] refer to image 3 , the preparation process of the LED chip comprises the following steps:

[0032] (1) Two laser beams arranged symmetrically and at an angle of 20-90° to each other obliquely cut into the substr...

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Abstract

The invention discloses an LED (Light Emitting Diode) chip with improved light emitting structure and a preparation method thereof. The LED chip comprises a transparent substrate of which the front side is grown with an epitaxial layer; the substrate has step-shaped structure; and at least the upper part of the side edge of the substrate is provided with an inclined edge which forms an included angle of 10-45 degrees with the vertical direction form. The method comprises the following steps of: cutting two beams of laser mutually forming an included angle of 20-90 degrees into the substrate till the first setting depth from the back of the substrate in an inclined mode; forming two inclined shear marks which are not mutually cross; causing multiple parallel beams of laser between the two inclined shear marks into the substrate to the second setting depth so as to form a Y-shaped cut groove on the substrate, wherein the second setting depth is more than the first setting depth; finally, causing one beam of laser to vertically cut through the substrate and the epitaxial layer grown on the front side of the substrate; separating the adjacent LED chips from the preset cutting position. The LED chip has the advantages of simple structure, high lighting efficiency, simple and efficient preparation technology, low cost and high yield and does not sheet cracking operation.

Description

technical field [0001] The invention relates to an LED chip and a manufacturing method thereof, in particular to an LED chip with high light extraction efficiency and a preparation process thereof. The LED chip has an improved light output structure. Background technique [0002] At present, light-emitting diodes (LEDs) have been widely used in lighting and other fields due to their small size, high luminous efficiency, and long life. Lasers, optical information storage, ultraviolet detectors and other fields have great application potential. Common light-emitting diodes mainly use wafers formed of sapphire and other materials as substrates, which generally have the following characteristics in terms of shape and structure, that is, the front and back of the substrate are parallel to the light-emitting layer in the epitaxial layer, and the two pairs of sides are perpendicular to the light-emitting layer. . This type of light-emitting diode has low light extraction efficien...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/20H01L33/00B23K26/36
Inventor 梁秉文
Owner SUZHOU NAFANG TECH DEV