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An optimization method for na-sigma configuration of lithography machine

An optimization method and lithography machine technology, applied in microlithography exposure equipment, photolithography process exposure devices, etc., can solve problems such as large amount of calculation, low precision, and difficulty in finding the NA-Sigma configuration, and achieve high precision. Effect

Active Publication Date: 2011-12-21
BEIJING INSTITUTE OF TECHNOLOGYGY
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Problems solved by technology

However, this method often needs to traverse all possible values ​​​​in the range of NA and Sigma, which has a large amount of calculation and low precision, and it is difficult to find the optimal NA-Sigma configuration.

Method used

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  • An optimization method for na-sigma configuration of lithography machine
  • An optimization method for na-sigma configuration of lithography machine
  • An optimization method for na-sigma configuration of lithography machine

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Embodiment

[0045] The optimization process of the present invention will be described below by taking the optimization of the NA-Sigma configuration of a 45nm node photolithography machine as an example.

[0046] For dense lines at 45nm nodes, immersion lithography is used, the refractive index of the immersion liquid is 1.44, the numerical aperture of the projection objective lens is adjustable within [1, 1.35], the exposure wavelength is 193nm, and resolution enhancement technology is used to improve its resolution and increase Large depth of focus for lithography, attenuated phase-shift mask for the mask type, and ring lighting for the illumination method. In order to improve the resolution and ensure the yield, the ring width of the ring illumination method is selected as 0.15, that is, the outer coherence factor and the inner The difference between the coherence factors is 0.15 (Δσ = σ out -σ in =0.15), such as figure 2 shown. In order to further increase the focal depth of lith...

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Abstract

The invention provides an optimization method for the NA-Sigma configuration of a photoetching machine. The method provided by the invention comprises the following concrete courses: selecting a point with the greatest photoetching focal depth from two optimization directions which are set in advance; when the selected point does not meet the conditions, computing a new optimization direction andobtaining the corresponding point with the greatest photoetching focal depth in the new optimization direction to further judge whether the obtained point meets the conditions or not; and when the obtained point does not meet the conditions, updating the selected optimization direction until the obtained point with the greatest photoetching focal depth meets the conditions. The method provided bythe invention can rapidly and effectively optimize to obtain the optimum NA-Sigma configuration, obtains the greatest photoetching focal depth and has high accuracy.

Description

technical field [0001] The invention relates to an optimization method for configuring the numerical aperture of a projection objective lens of a lithography machine and the coherence factor (NA-Sigma) of an illumination system, and belongs to the field of collaborative optimization design of parameters of a lithography machine. Background technique [0002] At present, large-scale integrated circuits are generally manufactured by photolithography systems. The lithography system is mainly divided into five parts: light source, illumination system, mask, projection system and wafer. The light emitted by the light source is incident on the mask after being shaped by the lighting system, and the opening of the mask is partially transparent; after passing through the mask, the light is incident on the wafer coated with photoresist through the projection system, so that the mask pattern is copied on the wafer . [0003] Depth of focus in lithography is one of the main parameter...

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Application Information

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IPC IPC(8): G03F7/20
Inventor 李艳秋郭学佳
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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