Electrostatic Discharge Protection Device
A technology of electrostatic discharge protection and electrostatic discharge, which is applied in the direction of circuits, electrical components, electric solid devices, etc., can solve the problems of increasing the overall area of components and failing to achieve high component density, and achieve the effect of high component density
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no. 1 example
[0041] Such as Figure 4a As shown, the ESD protection device 500 a in the embodiment of the present invention is disposed on a substrate 200 . The ESD protection device 500a includes a first doped region 202, a second doped region 204 and a third doped region 206 disposed in the first well region 208, wherein the first doped region 202 can be coupled to, for example, image 3 The power supply terminal VCC1 or the ground terminal GND1 of the first circuit 250a shown, and the second doped region 204 and the third doped region 206 can be correspondingly coupled to image 3 The power supply terminal VCC2 or the ground terminal GND2 of the second circuit 250b is shown.
[0042] For example, if the first doped region 202 is coupled to image 3 When the power supply terminal VCC1 of the first circuit 250a is shown, the second doped region 204 and the third doped region 206 are correspondingly coupled to the image 3 The power supply terminal VCC2 of the second circuit 250b is sho...
no. 2 example
[0049] Such as Figure 4b As shown, the first doped region 202 can also be located in the first well region 208 simultaneously with the second doped region 204 and the third doped region 206 . If the conductivity type of the substrate 200 is p-type, the electrostatic discharge protection device 500b can be regarded as having a first doped region 202 such as a p-type doped region, a first well region 208 such as an n-type well region, such as The third doped region 206 of the n-type doped region and the second doped region 204 such as the p-type doped region constitute a parasitic p-type-n-type-p-type junction bipolar transistor 500b.
[0050] Wherein the p-type first doped region 202 can be regarded as the emitter of the above-mentioned parasitic PNPBJT500b, the n-type first well region 208 and the n-type third doped region 206 can be regarded as the base of the above-mentioned parasitic PNPBJT500b respectively, and the p Type second doped region 204 can be regarded as the co...
no. 3 example
[0061] Since ESD may occur at the power supply terminal VCC1, it may also occur at the power supply terminal VCC2. Therefore, if Figure 4a or Figure 4b The ESD protection device 500a or 500b shown can be respectively connected in parallel with an ESD protection device conducting in the opposite direction to provide protection against ESD phenomena that may occur at the power supply terminal VCC1 or the power supply terminal VCC2.
[0062] Such as Figure 5a As shown, the electrostatic discharge protection device 500c is composed of an electrostatic discharge protection sub-device 500a1 connected in parallel with an electrostatic discharge protection sub-device 500a2 conducting in the opposite direction, wherein the electrostatic discharge protection sub-device 500a1 and 500a2 are connected with Figure 4a The illustrated ESD protection device 500a has exactly the same structure.
[0063] Such as Figure 5a As shown in FIG. Figure 4aThe first doped region 202 , the seco...
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