Three-axis magnetic field sensor
A magnetic field sensor, magnetoresistive sensor technology, applied in the fields of magnetic field controlled resistors, instruments, nano-magnetics, etc., can solve the problems of high cost, high core and packaging cost, and difficult chip-level packaging.
Active Publication Date: 2011-12-21
EVERSPIN TECHNOLOGIES
View PDF7 Cites 35 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Since the dimensions of vertically bonded chips are typically dictated by pad pitches determined according to processing constraints, this technique results in a large vertical extent
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Login to View More PUM
Login to View More Abstract
The three bridge circuits (101, 111, 121) each include magnetoresistive sensors coupled into a Wheatstone bridge (100) to sense magnetic fields (160) in three orthogonal directions (110, 120, 130). ), which are set by a single pinning material deposition and bulk wafer setting process. One (121) of the three bridge circuits includes a first magnetoresistive sensor (141) comprising: a first sensing element (122) disposed on the pinning layer (126), the first sensing element (122 ) having first and second edges and first and second faces; and a first flux guide (132) disposed non-parallel to the first face of the substrate and having a proximity to the first sensing element (122) The first edge of and the end of the first face. An optional second flux guide (136) may be disposed non-parallel to the first face of the substrate and have an end proximate to a second edge of the first sensing element (122) and the second face.
Description
technical field [0001] The present invention relates generally to the field of magnetoelectronic devices, and more particularly to CMOS compatible magnetoelectronic field sensors for sensing magnetic fields in three orthogonal directions. Background technique [0002] Sensors are widely used in modern systems to measure or detect physical parameters such as position, motion, force, acceleration, temperature, pressure, etc. Although there are many different sensor types for measuring these and other parameters, they all suffer from various limitations. For example, inexpensive low-field sensors such as those used in electronic compasses and other similar magnetic sensing applications often include anisotropic magnetoresistance (AMR) based devices. In order to achieve the required sensitivity and a reasonable resistance that works well with CMOS, the sensing cells of these sensors are usually on the order of square millimeters in size. For mobile applications, AMR sensor con...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): G11C5/12
CPCG01R33/093B82Y25/00H01L27/22H01L43/08H10B61/00H10N59/00H10N50/10
Inventor P·马瑟J·斯劳特N·里佐
Owner EVERSPIN TECHNOLOGIES
Features
- R&D
- Intellectual Property
- Life Sciences
- Materials
- Tech Scout
Why Patsnap Eureka
- Unparalleled Data Quality
- Higher Quality Content
- 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com
