Unlock instant, AI-driven research and patent intelligence for your innovation.

Power semiconductor component with drain voltage protection and manufacturing method thereof

A power semiconductor and drain voltage technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as high cost and complicated process, and achieve the effect of excellent electrostatic protection ability

Inactive Publication Date: 2011-12-28
ANPEC ELECTRONICS CORPORATION
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] One of the main purposes of the present invention is to provide a power semiconductor component with drain voltage protection and its manufacturing method, so as to solve the disadvantages of complicated process and high cost of the known technology

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Power semiconductor component with drain voltage protection and manufacturing method thereof
  • Power semiconductor component with drain voltage protection and manufacturing method thereof
  • Power semiconductor component with drain voltage protection and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] Please refer to Figure 2 to Figure 6 , Figure 2 to Figure 6 It is a schematic diagram of a method for manufacturing a power semiconductor device with drain voltage protection according to a first embodiment of the present invention. Such as figure 2As shown, firstly, a semiconductor substrate 102 is provided, the semiconductor substrate 102 has an upper surface 104 and an opposite lower surface 106, and a first component region 108, a second component region 110 and a drain are defined on the semiconductor substrate 102 Connection zone 112 . Moreover, the first device area 108 is used for manufacturing trench gate transistor devices, and the second device area 110 is used for manufacturing trench type electrostatic protection devices. In addition, the semiconductor substrate 102 includes a substrate 114 and an epitaxial layer 116 disposed on the substrate 114 . The substrate 114 can be a silicon substrate, and both the substrate 114 and the epitaxial layer 116 ha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a power semiconductor assembly with drain voltage protection. The power semiconductor assembly comprises a semiconductor substrate, a groove-type grid transistor assembly and a groove-type electrostatic protection assembly. The upper surface of the semiconductor substrate is provided with a first groove and a second groove. The groove-type grid transistor assembly is arranged in the first groove and the semiconductor substrate; and the groove-type electrostatic protection assembly is arranged in the second groove and comprises a first doped region, a second doped region and a third doped region. The second doped region and the third doped region are electrically connected to the drain and the grid of the groove-type grid transistor assembly respectively. Therefore, the power semiconductor assembly provides good electrostatic protection capacity.

Description

technical field [0001] The invention relates to a power semiconductor component and a manufacturing method thereof, in particular to a power semiconductor component with drain voltage protection and a manufacturing method thereof. Background technique [0002] Power MOS transistor components are particularly susceptible to damage from electrostatic discharge pulses (ESD pulses) due to their high-voltage and high-current conduction characteristics. Especially in today's integrated circuit technology, in order to obtain a lower initial voltage, the thickness of the gate oxide layer of the power metal oxide semiconductor transistor component must be thinned. Under this requirement, the power metal oxide semiconductor transistor component is extremely vulnerable to Damaged by electrostatic discharge pulses generated by friction or other uncontrollable factors. Therefore, in the application of power metal oxide semiconductor transistor components, it is necessary to use an elect...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/77H01L27/04
Inventor 林伟捷杨国良叶人豪林家福
Owner ANPEC ELECTRONICS CORPORATION