Light emitting diode and manufacturing method thereof
A technology for light-emitting diodes and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of poor electrode stability and low light-emitting efficiency of light-emitting diodes, and achieves improved stability, improved light-emitting efficiency, and increased current injection density. Effect
Inactive Publication Date: 2015-04-01
EPILIGHT TECH
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Problems solved by technology
[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a light-emitting diode and its manufacturing method to solve the problems of low light extraction efficiency and poor electrode stability of the light-emitting diode in the prior art.
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[0014] The embodiments of the present invention are described below by specific embodiments, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification.
[0015] It should be noted that the structures, proportions, sizes, etc. shown in the drawings in this specification are only used to cooperate with the contents disclosed in the specification, so as to be understood and read by those who are familiar with the technology, and are not used to limit the implementation of the present invention. Restricted conditions, it does not have technical substantive significance, any structural modification, proportional relationship change or size adjustment, without affecting the effect that the present invention can produce and the purpose that can be achieved, should still fall within the present invention. The disclosed technical content must be within the scope of coverage. At the same tim...
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The invention provides a light emitting diode and a manufacturing method thereof, wherein the manufacturing method comprises the steps that: a buffer layer and an epitaxial layer sequentially grow on a semiconductor substrate by the metal organic chemical vapor deposition technology, the epitaxial layer comprises an N-GaN layer, a quantum well, a P-GaN layer and an aluminum nitride layer, the aluminum nitride layer grows on the P-GaN layer, and then, a P electrode manufacture region is protected by the mask technology; the aluminum nitride (AlN) layer beyond a chip P electrode region is corroded until the P-GaN layer is reached; a mask layer is removed, and an epitaxial structure with a current barrier function is formed; next, a transparent conducting layer, a P electrode and an N electrode are manufactured, and a chip with a current barrier layer structure is formed. The light emitting diode manufactured by the method has the advantages that the light outlet efficiency can be improved, and the electrode stability is reliable.
Description
technical field [0001] The present invention relates to a light emitting diode and a manufacturing method thereof, in particular to a light emitting diode with a current blocking layer and a manufacturing method thereof. Background technique [0002] Light emitting diodes (LEDs) have been widely used in display backlight modules, communications, computers, transportation because of their superior performance, such as long service life, low power consumption, no warm-up time, and fast response time. Signs and toys and other consumer markets, but at present because of the problem of insufficient brightness, it has not been widely used in the lighting market. In order to solve the problem of insufficient brightness of light-emitting diodes, people in the industry are constantly looking for ways to improve the brightness of light-emitting diodes. [0003] A common light-emitting diode is a N-type semiconductor layer, a quantum well layer, a P-type semiconductor layer, a transpa...
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IPC IPC(8): H01L33/00H01L33/14H01L33/36
Inventor 张楠周健华朱广敏郝茂盛
Owner EPILIGHT TECH