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Device for secondary charging of polycrystalline ingot furnace

A technology of secondary feeding and polycrystalline ingot, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of wasting space, reduce labor intensity, improve maximum utilization, and improve production efficiency Effect

Inactive Publication Date: 2014-05-14
HAREON SOLAR TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This wastes space outside the ingot inside the crucible

Method used

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  • Device for secondary charging of polycrystalline ingot furnace

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Embodiment Construction

[0022] see figure 1 , figure 1 It is a schematic diagram of the overall structure of the device for secondary charging of the polycrystalline ingot furnace of the present invention. Depend on figure 1 It can be seen that the device for secondary charging of the polycrystalline ingot furnace of the present invention includes a charging container 1, a vacuum system 11 is arranged outside the charging container 1, a feeding pipeline 2 is connected to the bottom of the charging container 1, and a feeding pipeline 2 is provided There is a control valve 12, and an observation window structure 4 is arranged under the feeding pipeline 2, and the feeding pipeline 2 and the observation window structure 4 are connected by a pipeline soft connection 3, and a feeding support structure 7 is set in the observation window structure 4, and a feeding support structure 7 is set on the feeding support structure 7. There is a feeding diversion structure 5, and the pipeline soft connection 3 comm...

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Abstract

The invention relates to a device for secondary charging of a polycrystalline ingot furnace, which belongs to the polysilicon ingot casting technical field during the production process in a photovoltaic industry. The device comprises a charging container (1), a vacuum system (11) is provided outside the charging container (1), a charging pipeline (2) is connected at the bottom of the charging container (1), a control valve (12) is provided on the charging pipeline (2), an observation window structure (4) is provided at the lower part of the charging pipeline (2), the charging pipeline (2) and the observation window structure (4) are connected through a pipeline soft-connector (3), a charging supporting structure (7) is provided in the observation window structure (4), a charging diversion structure (5) is provided on the charging supporting structure (7), the pipeline soft-connector (3) and the charging diversion structure (5) are communicated up and down, a lower diversion structure (9) is connected at the bottom of the charging diversion structure (5), a lower end of the lower diversion structure (9) is inserted into a furnace wall of an ingot furnace (10), a cooling system (8) is provided outside the lower diversion structure (9). The device of the invention is capable of raising production power of each ingot and saving the usage of the crucible.

Description

technical field [0001] The invention relates to a polycrystalline secondary feeding device. It belongs to the technical field of polysilicon ingot casting in the production process of the photovoltaic industry. Background technique [0002] In the polycrystalline ingot casting process, after the raw material is filled with the crucible, the ingot growth begins. During the ingot casting process, the silicon material is annealed and cooled at a high temperature of 1500 ° C in a working environment protected by an inert gas. The height of the silicon ingot that comes out is much lower than the height when it was first filled with raw materials. The upper part of the silicon ingot in the crucible has a relatively large space. This wastes space outside the ingot inside the crucible. Contents of the invention [0003] The object of the present invention is to overcome the above-mentioned disadvantages and provide a secondary charging device for polycrystalline ingot casting f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/06C30B29/06
Inventor 魏俊张永欣胡元庆梁会宁冯立学朱桂勇周云
Owner HAREON SOLAR TECHNOLOGY CO LTD
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