Semiconductor light-emitting element, semiconductor light-emitting device, and method for manufacturing semiconductor light-emitting element
A light-emitting device, semiconductor technology, applied in the direction of semiconductor devices, electrical solid devices, electrical components, etc., can solve the problems of not considering the pad electrode characteristics, shape, layout, improving light extraction efficiency, and reducing efficiency
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no. 1 example
[0032] figure 1 A and 1B are schematic diagrams illustrating the configuration of the semiconductor light emitting device according to the first embodiment of the present invention.
[0033] More specifically, figure 1 B is the floor plan, figure 1 A is along figure 1 Cross-sectional view of line A-A' of B.
[0034] Such as figure 1 As shown in A and 1B, the semiconductor light emitting device 110 according to the first embodiment of the present invention includes a stacked structure body 1s, and the stacked structure body 1s has an n-type semiconductor layer 1, a p-type semiconductor layer 2, and an n-type semiconductor layer Light emitting layer 3 between layer 1 and p-type semiconductor layer 2 .
[0035] In this specific example, the n-type semiconductor layer 1 is the first semiconductor layer, and the p-type semiconductor layer is the second semiconductor layer.
[0036] In this specific example, the laminated structural body 1s has a structure in which the p-type ...
no. 2 example
[0107] In the second embodiment of the present invention, an ohmic electrode and a Schottky electrode are provided for the electrode connected to the n-type semiconductor layer. In this case, light is extracted from the n-type semiconductor layer.
[0108] Figure 7 A and 7B are schematic diagrams illustrating the configuration of a semiconductor light emitting device according to a second embodiment of the present invention.
[0109] More specifically, Figure 7 B is the floor plan, Figure 7 A is along Figure 7 Cross-sectional view of line A-A' of B. Figure 7 B is from Figure 7 A plan view when viewed from arrow B of A.
[0110] Such as Figure 7 As shown in A and 7B, the semiconductor light emitting device 120 according to this embodiment includes a laminated structure 51s having a first semiconductor layer (p-type semiconductor layer 52), a second semiconductor layer (n-type semiconductor layer 51) and a light emitting layer 53 disposed between the first semicon...
no. 3 example
[0130] The third embodiment is a method of manufacturing a semiconductor light emitting device. Hereinafter, description will be made taking the manufacturing method of the semiconductor light emitting device 110 according to the first embodiment as an example.
[0131] More specifically, the method of manufacturing a semiconductor light emitting device according to this embodiment is a method of manufacturing a semiconductor light emitting device including: a stacked structural body 1s having a first semiconductor layer (n-type semiconductor layer 1), a second Two semiconductor layers (p-type semiconductor layer 2) and a light-emitting layer 3 disposed between the first semiconductor layer and the second semiconductor layer; a first electrode (n-side electrode 7), which is electrically connected to the first semiconductor layer; A second electrode (ohmic electrode 4o), which forms ohmic contact with the second semiconductor layer, and has light transmittance to light emitted ...
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