Method for detecting micro stress of unidirectional C/SiC (continuous carbon fiber reinforced silicon carbide composites) in oxidation environment

A composite material and detection method technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as poor accuracy of stress analysis, achieve the effect of improving accuracy, overcoming high cost, and simple and efficient process

Inactive Publication Date: 2012-02-01
NORTHWESTERN POLYTECHNICAL UNIV
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Problems solved by technology

[0007] In order to overcome the deficiency of poor stress analysis accuracy of the existing unidirectional C/SiC composite material mesostress d

Method used

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  • Method for detecting micro stress of unidirectional C/SiC (continuous carbon fiber reinforced silicon carbide composites) in oxidation environment
  • Method for detecting micro stress of unidirectional C/SiC (continuous carbon fiber reinforced silicon carbide composites) in oxidation environment
  • Method for detecting micro stress of unidirectional C/SiC (continuous carbon fiber reinforced silicon carbide composites) in oxidation environment

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[0034] refer to Figures 1 to 5 . In the following, for a unidirectional C / SiC composite subjected to tensile displacement load in an air environment of 600°C and 100KPa, the internal mesoscopic stress of the microstructure after being oxidized for 10 hours is predicted. The radius R of the carbon fiber bundle in this unidirectional C / SiC composite is 2mm, and the thickness d of the carbon interface and the silicon carbide matrix is i , d m are 200 μm and 800 μm, respectively, the width H of the microcracks in the matrixC is 200 μm, and the distance between adjacent microcracks, that is, the z-direction length L of the periodic microstructure is 16 mm. The performance parameters of each component material are shown in Table 1.

[0035] Table 1 Performance parameters of component materials

[0036]

[0037] Step 1: According to the known geometric parameters of the periodic microstructure of the unidirectional C / SiC composite and the material properties of each component...

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Abstract

The invention relates to a method for detecting micro stress of unidirectional C/SiC (continuous carbon fiber reinforced silicon carbide composites) in oxidation environment to solve the technical problem that the existing method for detecting the micro stress of the unidirectional C/SiC has poor stress analysis accuracy. The method has the following beneficial effects: the geometrical models of microstructures of the composites at different oxidation moments are obtained by applying an oxidation reaction kinetics equation to simulate microstructure oxidation processes; a microstructure finite element model after oxidation is built to calculate the finite element of the micro stress; the whole process from modeling to calculation is concise and efficient; the defects of high experiment method cost and long time are overcome; and with the help of the powerful post-processing function of ANSYS, the complex distribution of micro stress fields in the oxidized microstructures of the composites is accurately displayed, the stress analysis accuracy of the method for detecting the micro stress of the unidirectional C/SiC is improved, and the problems of low micro mechanics model accuracy and lack of accurate stress distribution description are solved.

Description

technical field [0001] The invention relates to a method for detecting the mesoscopic stress of a unidirectional C / SiC composite material, in particular to a method for detecting the mesoscopic stress of a unidirectional C / SiC composite material in an oxidizing environment. Background technique [0002] Carbon fiber reinforced silicon carbide ceramic matrix composites (Continuous carbon fiber reinforced silicon carbide composites, referred to as C / SiC) have excellent properties such as high temperature resistance, low density, high specific strength, high specific modulus, etc., making it gradually replace metal as a new generation High temperature structural materials. A major problem in the application of C / SiC composites is that carbon fibers are prone to oxidation in an oxidizing environment with a temperature higher than 400 °C. Due to the thermal expansion coefficient mismatch between the silicon carbide matrix and the carbon fiber bundles and interfaces, there are us...

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Application Information

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IPC IPC(8): G06F17/50
Inventor 许英杰张卫红
Owner NORTHWESTERN POLYTECHNICAL UNIV
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