Method for detecting micro stress of unidirectional C/SiC (continuous carbon fiber reinforced silicon carbide composites) in oxidation environment
A composite material and detection method technology, applied in special data processing applications, instruments, electrical digital data processing, etc., can solve problems such as poor accuracy of stress analysis, achieve the effect of improving accuracy, overcoming high cost, and simple and efficient process
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[0034] refer to Figure 1~5 . In the following, for a unidirectional C / SiC composite material subjected to tensile displacement load in an air environment of 600 °C and 100 KPa, the internal microscopic stress of the microstructure after oxidation for 10 hours is predicted. The radius R of the carbon fiber bundle in the unidirectional C / SiC composite is 2 mm, and the thickness d of the carbon interface and the silicon carbide matrix is i 、d m 200μm and 800μm respectively, the width H of the matrix microcrackC The distance between adjacent microcracks, that is, the z-direction length L of the periodic microstructure is 16 mm. The performance parameters of each component material are shown in Table 1.
[0035] Table 1 Performance parameters of component materials
[0036]
[0037] Step 1: According to the known geometric parameters of the periodic microstructure of the unidirectional C / SiC composite and the properties of each component material, construct a two-dimensiona...
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