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Structure of semiconductor device and manufacturing method thereof

A technology of device structure and manufacturing method, which is applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of not being able to fully improve the performance of the channel region, achieve increased carrier mobility, and reduce photolithography. , the effect of enhancing the performance of the device

Active Publication Date: 2012-02-08
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] This method of forming source / drain regions cannot fully improve the performance of the channel region and increase the mobility of carriers.

Method used

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  • Structure of semiconductor device and manufacturing method thereof
  • Structure of semiconductor device and manufacturing method thereof
  • Structure of semiconductor device and manufacturing method thereof

Examples

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Embodiment Construction

[0029] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0030] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, components and arrangements of specific examples are described below. Of course, they are only examples and are not intended to limit the invention. Furthermore, the present invention may repeat reference numerals and / or letters in different instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicat...

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Abstract

The invention provides a structure of a semiconductor device and a manufacturing method thereof. The method comprises the following steps: providing a semiconductor substrate; forming a first insulating layer on the surface of the semiconductor substrate; forming shallow trench isolations respectively embedded into the first insulating layer and the semiconductor substrate; forming strip-shaped grooves respectively embedded into the first insulating layer and the semiconductor substrate; forming a channel region in each groove; and forming gate stack lines on the channel regions and source / drain regions at both sides of the channel regions. The embodiment of the invention is suitable for manufacturing the semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductor device design and manufacture thereof, in particular to a semiconductor device structure and a manufacturing method for improving device performance through channel engineering. Background technique [0002] With the development of semiconductor manufacturing technology, the size of semiconductor devices is continuously reduced, and the requirements for the manufacturing process of semiconductor device structures are also getting higher and higher. [0003] The current progress in semiconductor manufacturing technology is largely achieved by continuously shortening the channel length of MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). The shortening of the channel length is mainly achieved by improving the semiconductor process technology and improving the processing level. Although the channel length can now be shortened to deep submicron or even nanometer dimensions, further ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/20H01L29/78H01L29/06
CPCH01L29/665H01L29/66651H01L29/7831H01L21/76229H01L29/66477H01L29/78
Inventor 钟汇才梁擎擎
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI