Film forming apparatus and film forming method

Abstract

The invention provides a film forming apparatus and a film forming method. Under the situation of using a solid raw material to form a film, a filming forming raw material gas can be supplied to the surface of a substrate stably and effectively, and the particulate pollution and the possibility that impurities are mixed in the film can be reduced. A film forming apparatus(100) comprises a processing container(1) for accommodating a wafer(W), a substrate heater(11) for heating the wafer(W), a keeping part(21) for keeping the wafer(W), a workbench(31) used as a raw material supporting table and a raw material heater(41) for heating the solid raw material. In the film forming apparatus, for example, on the workbench(31), the solid raw material is heated on one hand, and is reacted with other gasification promoting gas on the other hand, and the generated film forming raw material gas is supplied to the lower surface(a processed surface) of the wafer(W) kept on the keeping part(21), so that the film forming raw material gas generates a thermal decomposition on the surface of the wafer(W) to form the film.

Description

technical field [0001] The present invention relates to a film-forming apparatus and a film-forming method for performing film-forming processing on a semiconductor substrate or the like. Background technique [0002] Conventionally, there has been proposed a film-forming method using a solid raw material when forming a metal film or the like on a substrate as an object to be processed (for example, Patent Document 1). In a film forming apparatus, when a solid raw material having a low vapor pressure is vaporized and the raw material is transported to a chamber, the following method is generally employed. For example, a method is known in which solid raw material powder is put into a container different from the chamber, the solid raw material is heated, and the solid raw material is vaporized while being transported into the chamber by a carrier gas, and the solid raw material is transported to the chamber from above. The film formation object surface of the substrate is s...

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Problems solved by technology

[0003] However, in the above two methods, in the former method, there is a cold spot (Cold Spot) in the transfer pipe from the container that feeds the raw material to the chamber, or the partial pressure rises, and the temporarily vaporized raw material solidifies on the way. However, it is trapped (trap), so sometimes there is a failure that cannot be delivered to the chamber

In addition, the latter method has the problem that the raw material gas cannot be supplied to the chamber due to the decomposition of the raw material inside the gasifier, or that the solvent enters the film and becomes an impurity during film formation, causing the film quality to deteriorate.

In addition, in the above two methods, when the film-forming raw material is supplied into the chamber using the shower structure installed on the upper part of the substrate, the particles generated by the shower structure may fall due to gravity, and many particles may adhere to the chamber. Substrate surface such failure

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