Packaging structure of light-emitting diode
A technology of light-emitting diodes and packaging structures, applied in electrical components, electrical solid-state devices, circuits, etc., can solve the problems of heat accumulation, affecting life cycle and luminous efficiency, destroying high-power LED light source modules, etc., and achieving good heat dissipation performance. Effect
Inactive Publication Date: 2012-03-14
ZHANJING TECH SHENZHEN +1
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Problems solved by technology
Generally speaking, higher temperature will lead to lower internal quantum effects and significantly shorten the lifetime; on the other hand, the resistance of semiconductors decreases with the increase of temperature, and the sliding resistance will bring larger current and more A lot of heat is generated, resulting in the occurrence of heat accumulation; this thermal damage cycle often accelerates the destruction of high-power LED light source modules
In the prior art, if the heat energy generated by the crystal grains of the packaging structure of the light emitting diode cannot be exported in time, the junction temperature of the grains will be too high, thereby affecting its life cycle and luminous efficiency.
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[0015] see figure 1 The packaging structure 10 of the light emitting diode according to the first embodiment of the present invention includes a substrate 11 , a crystal die 12 , two metal electrodes 13 , and wires 14 respectively connecting the die 12 and the metal electrodes 13 .
[0016] The substrate 11 is a wafer-level substrate, that is, a substrate manufactured using semiconductor manufacturing processes, on which a micro-electro-mechanical mechanism can be disposed. The material of the substrate 11 can be made of silicon material. The substrate 11 has a first surface 112 and a second surface 114 opposite to the first surface 112 . The substrate 11 defines a groove 123 on the first surface 112 . The substrate 11 is provided with a first through hole 116 and two second through holes 118 on both sides of the first through hole 116 through E-beam (electron beam) or other energy beams. Both the first through hole 116 and the second through hole 118 pass through the first...
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The invention relates to a packaging structure of a light-emitting diode, which comprises a substrate and a grain arranged on the substrate. The substrate is provided with a first surface and a second surface which are arranged in an opposite way, the second surface of the substrate is provided with at least one heat-conducting block and at least one metal pad, the substrate is provided with at least one first through hole and two second through holes which penetrate through the first surface and the second surface, the first through hole of the substrate is filled with a heat-conducting column, each second through hole is filled with a conductive column, the conductive columns are respectively connected with different poles of the grain and the metal pad, and the heat-conducting column is connected with the grain and the heat-conducting block to transfer heat of the grain to the heat-conducting block. Since the heat-conducting column directly penetrates through the substrate to be thermally connected with the grain and the heat-conducting block, the heat produced by the grain can be directly and rapidly transferred to the heat-conducting block through the heat-conducting column, and the packaging structure of the light-emitting diode has a good cooling performance.
Description
technical field [0001] The invention relates to a light emitting diode, in particular to a packaging structure of a light emitting diode. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor light source, and its electrical, optical characteristics and life are sensitive to temperature. Here, a new type of light emitting diode that can maintain a stable light intensity during temperature changes can be found in Yukio Tanaka et al. A Novel Temperature-Stable Light-Emitting Diode in the document IEEE Transactions On Electron Devices, Vol.41, No.7, July 1994. Generally speaking, higher temperature will lead to lower internal quantum effects and significantly shorten the lifetime; on the other hand, the resistance of semiconductors decreases with the increase of temperature, and the sliding resistance will bring larger current and more More heat is generated, resulting in the occurrence of heat accumulation; this thermal damage cyc...
Claims
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IPC IPC(8): H01L33/48H01L33/64
CPCH01L33/486H01L33/62H01L33/642H01L33/647H01L2224/16H01L2224/48091H01L2224/48227H01L2224/73265H01L2924/01322H01L2924/00012H01L2924/00H01L2924/00014
Inventor 谢明村曾文良陈隆欣林志勇叶进连廖启维曾坚信
Owner ZHANJING TECH SHENZHEN