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Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

一种表面声波、电子设备的技术，应用在功率振荡器、电气元件、阻抗网络等方向，能够解决老化特性和耐温度冲击特性耐环境特性变差、不可避免老化特性、很难高Q化等问题，达到提高频率温度特性的效果

Inactive Publication Date: 2012-03-21
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the applicant of the present application has found through experiments that when the film thickness of the electrode is increased, the environmental resistance characteristics such as aging characteristics and temperature shock resistance characteristics will be deteriorated.
In addition, when the main purpose is to improve the frequency-temperature characteristics, as described above, the thickness of the electrode film must be increased, but deterioration of aging characteristics and temperature shock resistance characteristics is inevitable.
This also applies to the Q value, and it is difficult to achieve high Q without thickening the electrode film thickness

Method used

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  • Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus
  • Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus
  • Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic apparatus

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Embodiment Construction

[0098] Embodiments of a surface acoustic wave resonator, a surface acoustic wave oscillator, and an electronic device according to the present invention will be described in detail below with reference to the drawings.

[0099] First, refer to figure 1 A first embodiment of the surface acoustic wave (SAW) resonator of the present invention will be described. exist figure 1 middle, figure 1 (A) is a plan view of a SAW resonator, figure 1 (B) is a partially enlarged cross-sectional view, figure 1 (C) is used to specify the figure 1 (B) Enlarged view.

[0100] The SAW resonator 10 of this embodiment is configured based on a quartz substrate 30 , an IDT 12 and a reflector 20 . The quartz substrate 30 employs a substrate whose crystallographic axes are represented by an X-axis (electrical axis), a Y-axis (mechanical axis), and a Z-axis (optical axis).

[0101] In this embodiment, the quartz substrate 30 is an in-plane rotated ST-cut quartz represented by Euler angles (-1°≤φ≤...

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Abstract

The invention provides a surface acoustic wave resonator, a surface acoustic wave oscillator, and an electronic apparatus, capable of realizing excellent frenquency temperature characteristics. The surface acoustic wave resonator (10) includes: an IDT (12) which is disposed on a quartz substrate (30) with Euler angles of (-1 DEG <=[phi]<=1 DEG , 117 DEG<=[theta]<=142 DEG , 42.79 DEG <=|[psi]|<=49.57 DEG , which excites a surface acoustic wave in an upper mode of a stop band; and a groove 32 which is formed by recessing the quartz substrate between electrode fingers (18) which form the IDT (12). Here, the following expression is satisfied: 0.01[lambda]<=G, where [lambda] represents a wavelength of the surface acoustic wave and G represents a depth of the groove (13). The depth G of the groove (32) and a line occupancy [eta] of the IDT satisfy the following expression: - 2.5 G [lambda] + 0.675 <= [eta] <= - 2.5 G [lambda] + 0.775 and a number of pairs N of the electrode fingers in the IDT is in the range of the following expression: 160<=N<=220.

Description

technical field [0001] The present invention relates to a surface acoustic wave resonator, a surface acoustic wave resonator equipped with the surface acoustic wave resonator, and electronic equipment, and more particularly to a surface acoustic wave resonator of the type in which grooves are provided on the surface of a substrate, and a surface acoustic wave oscillator equipped with the surface acoustic wave resonator. devices and electronic equipment. Background technique [0002] In surface acoustic wave (SAW: surface acoustic wave) devices (such as SAW resonators), the frequency-temperature characteristics of the SAW stop band, the cut angle of the quartz substrate, and the formation method of the IDT (interdigital transducer, interdigital transducer) Changes have a greater impact. [0003] For example, Patent Document 1 discloses a structure that separately excites the upper mode and the lower mode of the stop band of a SAW, the distribution of each standing wave in th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02H03H9/25
CPCH03H9/0542H03H9/02661H03H9/14538H03B5/326H03H9/02551
Inventor 大胁卓弥饭泽庆吾山中国人
Owner SEIKO EPSON CORP
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