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Graphite/carbon felt composite electrode for monocrystalline silicon growing furnace

A composite electrode and growth furnace technology, applied in the field of crystal growth equipment, can solve the problems of high energy consumption of graphite electrodes, achieve the effects of reducing power consumption, solving excessive energy, and avoiding movement

Inactive Publication Date: 2012-04-04
ZHENJIANG HUANTAI SILICON TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The technical problem solved by the present invention is to provide a graphite / carbon felt composite electrode for single crystal silicon growth furnace that can reduce the energy consumption of crystal growth in view of the large energy consumption of graphite electrodes of traditional heaters

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  • Graphite/carbon felt composite electrode for monocrystalline silicon growing furnace
  • Graphite/carbon felt composite electrode for monocrystalline silicon growing furnace

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Embodiment Construction

[0012] The present invention will be further described below in conjunction with accompanying drawing.

[0013] As shown in the figure, a graphite / carbon felt composite electrode for a single crystal silicon growth furnace includes a heater 1 and an electrode 2, the electrode 2 and the heater 1 are connected by bolts 5, and the electrode 2 is externally equipped with Graphite sheath 4, an electrode insulation layer 3 is fixed between the electrode 2 and the graphite sheath 4, and an electrode insulation layer 3 is fixed between the electrode 2 and the graphite sheath 4, which greatly increases the temperature of the crystal furnace. The thermal resistance between the inside and the electrode reduces the power consumption, and its energy-saving effect can reach more than 10kW, which solves the problem of excessive energy loss of the heater electrode in the crystal furnace. In order to make the connection between the electrode and the electrode insulation layer more firm, a flan...

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Abstract

The invention relates to a graphite / carbon felt composite electrode for a monocrystalline silicon growing furnace. The graphite / carbon felt composite electrode comprises an electrode, a heater, a bolt and a graphite jacket outside the electrode, wherein an electrode heat-insulating layer is additionally arranged between the electrode and the graphite jacket. Because the electrode heat-insulating layer is fixedly arranged between the electrode and the graphite jacket, the thermal resistance between the interior of the crystal furnace and the electrode is increased, so that the power consumption is reduced, an energy-saving effect can reach more than 10kW, and the problem of overlarge energy loss of the heater and the electrode in the crystal furnace; in addition, the design idea in the invention can be applied to electrodes for growing polycrystalline silicon, sapphire and other various crystals.

Description

technical field [0001] The invention relates to a graphite / carbon felt composite electrode for a single crystal silicon crystal growth furnace, which belongs to the technical field of crystal growth equipment. Background technique [0002] In recent years, the energy crisis has intensified, and the growing energy demand has brought about a series of environmental problems. As an important way to solve energy and related problems, solar cell technology and industry have developed rapidly. At present, the development of solar cells is mainly based on monocrystalline silicon and polycrystalline silicon, but the production energy consumption of monocrystalline silicon and polycrystalline silicon is quite high. Taking 8-inch monocrystalline silicon as an example, the power is as high as 55kW during the equal-diameter growth process, but its growth rate is only about 1mm / min, and the growth process of a single crystal rod lasts for more than 50 hours, so its energy consumption is ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B35/00C30B15/14
Inventor 袁志钟王禄宝张锦根
Owner ZHENJIANG HUANTAI SILICON TECH
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