Variable capacitor in SiGe Bi CMOS technology and manufacturing method thereof
A technology of variable capacitors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve problems such as difficulty in satisfying radio frequency and analog circuits, poor inverse linear relationship between capacitance value and voltage, and achieve low cost Effect
Active Publication Date: 2012-04-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, most of the existing junction capacitances are formed by ion implantation, and they are slow-varying junctions. The inverse linear relationship between capacitance and voltage is relatively poor, and it is difficult to meet the needs of radio frequency and analog circuits.
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[0026] Such as figure 1 Shown is a schematic structural diagram of a variable capacitor according to an embodiment of the present invention. The variable capacitor in the silicon germanium BiCMOS process of the embodiment of the present invention is formed on the silicon substrate 1, and the active area is isolated by the shallow trench field oxygen 2, and the variable capacitor includes:
[0027] An N well 7 is formed in the active region, and the depth of the N well 7 is greater than the depth of the bottom of the shallow trench field oxygen 2 . The capacitance of the variable capacitor is determined by the doping concentration of the N well 7, and the N-type doping impurities of the N well 7 include phosphorus atoms or arsenic atoms with different implantation energies for multiple times. Implantation dose of N-type dopant impurity 1e12cm -2 ~5e14cm -2 , The injection energy is 50KeV-500KeV.
[0028] An N-type pseudo-buried layer 5 is formed at the bottom of the shallow...
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The invention discloses a variable capacitor in a SiGe Bi CMOS technology. The variable capacitor comprises: an N trap and a P type polysilicon layer. The N trap is formed in an active region, is connected with a pseudo buried layer which is on a shallow groove field oxygen bottom and is led out through a deep hole contact. The polysilicon layer is formed above the N trap, contacts with the N trap and forms a unilateral abrupt junction. The variable capacitor is formed by the unilateral abrupt junction The invention also discloses a manufacturing method of the variable capacitor in the SiGe Bi CMOS technology. By using the method of the invention, a voltage coefficient of the variable capacitor can be improved; performance of the variable capacitor can be improved and a performance requirement of a radio frequency product to the variable capacitor can be satisfied; the method can be compatible with the SiGe Bi CMOS technology and costs can be reduced.
Description
technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a variable capacitor in the silicon-germanium BiCMOS process; the invention also relates to a method for manufacturing the variable capacitor in the silicon-germanium BiCMOS process. Background technique [0002] A variable capacitor is a passive device widely used in radio frequency and analog circuits. Unlike ordinary capacitors, a variable capacitor needs to change its capacitance with the change of the applied voltage. A variable capacitor with good performance requires a linear inverse proportional relationship between the capacitance value and the applied voltage to facilitate circuit design. The two kinds of variable capacitors commonly used in the prior art are MOS variable capacitors and junction variable capacitors. Neither of these two existing variable capacitors can realize the inverse linear relationship between the capacitance value and...
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IPC IPC(8): H01L29/74H01L21/329
Inventor 钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP