Manufacturing method of TFT (Thin Film Transistor) array substrate and TFT array substrate
The technology of an array substrate and a manufacturing method, which is applied in the field of liquid crystal display, can solve the problems of increasing the area of storage capacitors, reducing the aperture ratio of pixels, and being easily affected by strong light, so as to ensure the area, increase the aperture ratio, and avoid stability Reduced effect
Active Publication Date: 2014-02-05
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, using this traditional 5Mask technology to manufacture the TFT liquid crystal display array substrate, the TFT switching device is not protected during the exposure process, making it vulnerable to strong light, thereby reducing the stability of the TFT switching device; and , the existing storage capacitor, if you want to increase the capacitance value, you need to increase the area of the storage capacitor, which will lead to a decrease in the aperture ratio of the corresponding pixel
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
no. 1 example
[0038] Compared with the first embodiment, in this embodiment, the manufacturing method of the TFT array substrate may further include:
[0039] Step S4, depositing a second metal film layer on the substrate including the light-blocking metal and the lower electrode of the first storage capacitor, performing a glue-coating, exposure and development process on the second metal film layer, and after etching and stripping, Obtain the upper electrode of the first storage capacitor.
[0040] After obtaining the light-blocking metal and the lower electrode of the first storage capacitor, a vacuum sputtering method can be used to deposit a layer on the first insulating layer deposited on the substrate containing the light-blocking metal and the lower electrode of the first storage capacitor. The second metal film layer, then, can adopt the PECVD method to deposit a layer of ohmic contact layer on the second metal film layer, and carry out the process of coating, exposing and developing...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A TFT array substrate manufacturing method and a TFT array substrate. The TFT array substrate manufacturing method comprises: depositing a first metal film layer on a substrate (10); performing a gluing-exposure-development process on the first metal film layer, etching the first metal film layer and removing the glue from the first metal film layer, to obtain a light blocking metal (70); performing a gluing-exposure-development process on the first metal film layer, etching the first metal film layer and removing the glue from the first metal film layer, to form a lower electrode (81) of a first storage capacitor. In the TFT array substrate manufacturing method, the light blocking metal (70) is formed on the substrate (10) to protect the TFT switch device, and prevent same from being affected by bright light, thereby improving the stability of the TFT switch device. The capacitors are connected in parallel to reduce the area of the storage capacitor, thereby increasing the aperture ratio of the corresponding pixel.
Description
technical field [0001] The invention relates to the field of liquid crystal display, in particular to a manufacturing method of a TFT array substrate and the TFT array substrate. Background technique [0002] While the TFT liquid crystal display is widely used and attracts more and more attention from people, the requirement for the display quality of the TFT liquid crystal display is also getting higher and higher. At present, the manufacture of TFT liquid crystal display array substrates usually adopts 5Mask technology, including gate electrode lithography (GateMask), active layer lithography (Active Mask), source and drain lithography (S / DMask), via hole lithography (ViaHoleMask) And the 5Mask technology of pixel electrode layer lithography (PixelMask), and each Mask process step includes one or more thin film deposition processes and etching processes, forming 5 times of film deposition → photolithography → etching cycle process. However, using this traditional 5Mask t...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/77H01L27/12G02F1/1362G02F1/1368
CPCH01L21/77H01L29/78633H01L27/1288
Inventor 覃事建
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD