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Semiconductor device with super junction and manufacturing method of semiconductor device

A device manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems affecting device withstand voltage stability and reliability, achieve uniform impurity concentration and distribution, and enhance reliability , uniform effect

Active Publication Date: 2012-04-18
WUXI NCE POWER
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, since the P columns are formed by P-type epitaxial growth and filling in this method, the epitaxial growth process directly determines the consistency of the P columns in the trench, which directly affects the withstand voltage stability and reliability of the device.

Method used

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  • Semiconductor device with super junction and manufacturing method of semiconductor device
  • Semiconductor device with super junction and manufacturing method of semiconductor device
  • Semiconductor device with super junction and manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Such as figure 1 As shown: on the top view plane of the semiconductor device, the element region 1 includes a P column 3 and an N column 4, and the adjacent P column 3 and N column 4 form a PN column pair of a super junction structure, and the element area 1 includes multiple pairs of PN column pairs arranged in parallel; the element area 1 also includes conductive polysilicon 5 , and the conductive polysilicon 5 is located in the area corresponding to the N column 4 and is located above the N column 4 . figure 1 The peripheral area 2 is highlighted in , and the effectiveness of this embodiment is illustrated by highlighting the relationship between the PN column pairs in the peripheral area 2 and the PN column pairs in the element area 1 .

[0048] On the top view plane of the semiconductor device, the peripheral area 2 includes a first area 17 parallel to the PN column pair in the element area 1 and a second area 18 perpendicular to the PN column pair in the element a...

Embodiment 2

[0054] Such as image 3 As shown: on the top view plane of the semiconductor device, the element region 1 includes a P column 3 and an N column 4, and the adjacent P column 3 and N column 4 form a PN column pair of a super junction structure, and the element area 1 includes multiple pairs of PN column pairs arranged in parallel; the element area 1 also includes conductive polysilicon 5 , and the conductive polysilicon 5 is located in the area corresponding to the N column 4 and is located above the N column 4 .

[0055] On the top view plane of the semiconductor device, the peripheral area 2 includes a first area 17 parallel to the PN column pair in the element area 1 and a second area 18 perpendicular to the PN column pair in the element area 1, the first Both the region 17 and the second region 18 are provided with a super junction structure; the first region 17 and the second region 18 are connected end-to-end in order to form a structure surrounding the device region 1 . ...

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Abstract

The invention relates to a semiconductor device with a super junction and a manufacturing method of the semiconductor device. The semiconductor device provided by the invention comprises an element region and a peripheral region which are located on a semiconductor substrate; on the cross section of the semiconductor device, a first conductive type epitaxial layer of the semiconductor substrate internally comprises a plurality of pairs of first columns with a first conductive type and second columns with a second conductive type; the first columns and the second columns extend in the first conductive type epitaxial layer of the semiconductor substrate along a current flowing direction; a plurality of pairs of PN columns which are formed by the first columns and the second columns are alternatively connected in the direction vertical to the current flowing direction and the super junctions are formed in the semiconductor substrate; the super junctions exist in the element region and the peripheral region; a crystal face of a PN column contact surface, corresponding to the super junction in the peripheral region, and the crystal face of the PN column contact surface, corresponding to the super junction in the element region, belong to the same crystal face cluster. The semiconductor device with the super junction has the advantages of good pressure-proof consistency and reliability, simple manufacturing process and low manufacturing cost and is suitable for the production in batches.

Description

technical field [0001] The invention relates to a semiconductor device and a manufacturing method thereof, in particular to a semiconductor device with a super junction structure and a manufacturing method thereof, belonging to the technical field of semiconductor devices. Background technique [0002] Semiconductor power MOSFET devices with a super junction structure (Super Junction) have electrical characteristics of high withstand voltage and low on-resistance. The superjunction structure is formed in the drift layer of the device. The drift layer includes columns of N conductivity type (N columns) and columns of P conductivity type (P columns), and a plurality of P-N column pairs formed by alternately adjoining N columns and P columns form a super junction structure. The N column has impurities of N conductivity type, the P column has impurities of P conductivity type, and the impurity amount of the N column is consistent with the impurity amount of the P column. When ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 朱袁正叶鹏李宗清
Owner WUXI NCE POWER
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