Method for self forming barrier layer containing manganese-silicon oxide in interlayer dielectric layer

Abstract

The invention provides a method for self forming a barrier layer containing manganese-silicon oxide in an interlayer dielectric layer. The method comprises the following steps of: firstly forming a plurality of copper-filled grooves on a dielectric layer of a wafer, and depositing a manganese-copper layer on the dielectric layer and the surface of copper in the groove; filling copper on the manganese-copper layer in the groove; removing surplus copper, the manganese-copper layer and the dielectric layer by chemically mechanical polishing, and depositing a second dielectric layer on the wafer after the chemically mechanical polishing; and finally carrying out annealing operation on the wafer, wherein in the process of annealing, the manganese in the manganese-copper layer and the silicon and the oxygen in the dielectric layer react to generate the barrier layer containing the manganese-silicon oxide. By the method disclosed by the invention, the barrier layer containing the manganese-silicon oxide is self formed in the interlayer dielectric layer, thus the process steps are reduced, the production efficiency is improved, and the reliability of devices is also improved at the same time; furthermore, the barrier layer containing the MnSixOy is self formed, thus no new diffusion barrier layer needs to be formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor preparation, more precisely, the invention relates to a method for self-forming a manganese-containing silicon oxide barrier layer in an interlayer dielectric layer. Background technique [0002] For decades, aluminum has been used as a wire material inside chips. As the line width shrinks, the speed of component operations will be significantly reduced due to the increase in the delay of multiplying the resistor value and the capacitor value. In order to face denser circuit designs, the industry chooses copper with lower resistance to replace aluminum. [0003] Due to the low resistance of copper, components using copper as wires can withstand denser circuit arrangement, which can greatly reduce the number of metal layers required, thereby reducing production costs and increasing the computing speed of computers. In addition, copper also has high electromigration (EM) resistance, so compo...

AI Technical Summary

Problems solved by technology

Although this method self-forms a manganese-containing silicon oxide compound (MnSi x o y ) barrier layer, but there is no barrier layer between copper and the next dielectric layer, and when the annealing time is not long enough, some manganese will diffuse into copper, resulting in an increase in resistance and affecting device performance

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