Structure and method of forming electrically blown metal fuses for integrated circuits

Abstract

A fuse structure for an integrated circuit device includes an elongated metal interconnect layer (106) defined within an insulating layer; a metal cap layer (108) formed on only a portion of a top surface of the metal interconnect layer; and a dielectric cap layer (112) formed on both the metal cap layer (108) and the remaining portions of the metal interconnect layer not having the metal cap layer (108) formed thereon; wherein the remaining portions of the metal interconnect layer not having the metal cap layer (108) formed thereon are susceptible to an electromigration failure mechanism so as to facilitate programming of the fuse structure by application of electric current through the elongated metal interconnect layer (106).

Description

technical field [0001] The present invention relates generally to the fabrication of integrated circuit (IC) devices, and more particularly to structures and methods of forming electrically open metal fuses for integrated circuits. Background technique [0002] In integrated circuit devices, such as complementary metal-oxide-semiconductor (CMOS) integrated circuits, it is often desirable to be able to store information permanently, or to form permanent connections to the integrated circuit after fabrication. Fuses or devices that form a disconnectable connection are often used for this purpose. For example, fuses can also be used to program redundant components to replace identical defective ones. Additionally, fuses may be used to store chip identification or other such information, or to adjust the speed of a circuit by adjusting the resistance of the current path. [0003] One type of fuse device is "programmed" or "opened," after processing and passivating the semicond...

AI Technical Summary

Problems solved by technology

In other words, laser opening fuses requires additional tool setup, and increased time to test wafers

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