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Simplex matching network, and construction method and radio-frequency power source system thereof

A technology of RF power source and matching network, applied in the field of RF power source and matching network, can solve the problems of reducing RF coupling efficiency, increasing system complexity and cost, etc.

Active Publication Date: 2012-05-02
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Then the whole system needs multiple matching networks, which will increase the complexity and cost of the system
In terms of cost and system reliability, people prefer to use a single matching network suitable for multiple RF frequencies, and such a setting will not reduce the efficiency of RF coupling

Method used

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  • Simplex matching network, and construction method and radio-frequency power source system thereof
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  • Simplex matching network, and construction method and radio-frequency power source system thereof

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Embodiment Construction

[0076] image 3 A schematic diagram of a plasma processing chamber according to a specific embodiment of the present invention is shown, wherein a single matching network HF1 is used to provide RF matching for any one of multiple switchable RF source powers. Such as image 3 As shown, the plasma processing chamber has switchable RF bias power (switchable RF bias power) and switchable RF source power (switchable RF source power). In this embodiment, the frequency of the first radio frequency bias power is set to 0.5-10 MHz, and the frequency of the second radio frequency bias power is set to 10-30 MHz. Similarly, the frequency of the power of the first radio frequency source is set to 40-100 MHz, such as 60 MHz, and the frequency of the power of the second radio frequency source is set to 80-200 MHz, such as 120 MHz. Such a plasma processing chamber can achieve better plasma density and ion energy control, thereby enhancing adaptability. image 3 The left part of the figure ...

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Abstract

The invention relates to a simplex matching network applicable to the input of at least two frequencies, and is used for selectively providing any one of the two frequencies with radio-frequency power matched to a plasma load. The simplex matching network comprises an input end connected to the multi-frequency input and an output end connected to the plasma load, wherein a capacitor and an inductor which are connected with each other in series are included between the input end and the output end; the capacitor and the inductor form a branch circuit; the capacitance of the capacitor is C0, and the inductance of the inductor is L0; the capacitance C0 and the inductance L0 meet the following relationship: j omega1L0+1 / j omega1C0=jy1j omega2L0+1 / j omega2C0=jy2; omega1=2 pi f1, and omega2=2 pi f2; the f1 and f2 are the magnitudes of the two frequencies respectively; and y1 is the impedance required by the branch circuit in a matching state achieved at the frequency f1, and y2 is the impedance required by the branch circuit in a matching state achieved at the frequency f2.

Description

technical field [0001] The invention relates to a radio frequency power source and a matching network for a plasma processing chamber, in particular to a matching network capable of realizing selective application of multi-frequency radio frequency power, its construction method and a radio frequency power source system using the matching network. Background technique [0002] Plasma processing chambers utilizing two or more radio frequency frequencies are known in the art. Typically, a plasma processing chamber with a dual frequency input receives RF bias power (RF bias power) with a frequency less than about 15 MHz and RF source power (RF source power) with a slightly higher frequency (about 27-200 MHz). In this paper, RF bias power generally refers to the RF power used to control ion energy and ion energy distribution; RF source power generally refers to the RF power used to control plasma ion dissociation or plasma density. As some specific examples, usually the plasma ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46
CPCH01J37/32183H03H7/38H03H2007/386Y10T29/49117H05H1/46
Inventor 欧阳亮刘磊钱学明陈金元
Owner ADVANCED MICRO FAB EQUIP INC CHINA