Manufacturing method for trench isolation structure of phase change memory
A technology of phase change memory and manufacturing method, which is applied in the field of manufacturing trench isolation structure of phase change memory, and can solve the problems of low yield rate of phase change memory and easy leakage of devices, etc.
Active Publication Date: 2012-05-09
SEMICON MFG INT (SHANGHAI) CORP +1
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[0009] However, the yield rate of the phase change memory formed by the above method is low, and the device is prone to leakage
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[0023] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0024] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.
[0025] As mentioned in the background art section, the yield rate of the phase change memory manufactured by the existing technology is low, and the device is prone to electric leakage. The inventors found that there is a problem in the prior art phase change memory manufacturing method, which usually adopts the process of first forming the deep trench isolation region and then forming the shallow trench isolation region to manufacture the...
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The invention relates to a manufacturing method for a trench isolation structure of a phase change memory; the manufacturing method comprises the following steps of: providing a semiconductor substrate which sequentially comprises a substrate region, a well region, an epitaxial layer and a hard masking film layer; patterning the hard masking film layer, and by using the hard masking film layer as a masking film, etching the semiconductor substrate so as to form a deep trench opening, wherein the deep trench opening at least exceeds the bottom of the well region in depth; forming a sacrificial layer on the semiconductor substrate, wherein the sacrificial layer fills the deep trench opening to the full and covers the hard masking film layer; etching the hard masking film, the sacrificial layer and the epitaxial layer so as to form a shallow trench opening, wherein a different value between the etching depth of the sacrificial layer and the etching depth of the epitaxial layer is less than the etching depth of the epitaxial layer by 30%, and the shallow trench opening is vertical to the extension direction of the deep trench opening; completely removing the sacrificial layer on the semiconductor substrate; and filling the shallow trench opening and the deep trench opening with the dielectric materials so as to respectively form a shallow trench isolation region and a deep trench isolation region.
Description
technical field [0001] The invention relates to the technical field of semiconductors, and more specifically, the invention relates to a method for manufacturing a phase-change memory trench isolation structure. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is based on the idea that S.R. Ovshinsky proposed in the late 1960s that phase change films could be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. It has become the focus of current research on non-volatile storage technology. [0003] In phase-change memory, the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an am...
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Inventor 李凡洪中山
Owner SEMICON MFG INT (SHANGHAI) CORP