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Transistor and method of making the same

A manufacturing method and transistor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., to achieve excellent carrier mobility and broaden the selection range

Inactive Publication Date: 2016-05-04
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the bottleneck of using nanowires to make components is how to overcome the size problem and how to align and control them. If a large number of them can be arranged regularly, there will be a chance to successfully introduce mass production processes.

Method used

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  • Transistor and method of making the same
  • Transistor and method of making the same

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Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the accompanying drawings.

[0024] See figure 1 , the transistor 100 provided by the embodiment of the present invention includes a substrate 10 , a nanowire 15 , a source 40 , a drain 50 , an insulating layer 60 and a gate 70 .

[0025] The source electrode 40 and the drain electrode 50 are attached on the substrate 10 opposite to each other at intervals. In this embodiment, the source electrode 40 and the drain electrode 50 are formed by stacking two layers of conductive films, and are close to the substrate. The opposite ends of the two conductive film layers of 10 are all pointed designs.

[0026] It can be understood that the source 40 and the drain 50 can also be a single-layer structure.

[0027] The nanowire 15 overlaps between the tips of the source 40 and the drain 50 to serve as an electron and hole transmission channel between the source 40 and the drain 50 .

[0028] The...

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Abstract

The invention relates to a transistor which comprises a nano wire, a base plate, a source, a drain, a insulating layer and a gate, wherein the source and the drain are adhered to the base plate in a spaced and opposite manner; the nano wire is lap jointed between the source and the drain; the insulating layer is covered on the source and the drain and in the region between the source and the drain; the gate is overlaid on the insulating layer; both the opposite ends of the source and the drain are in a tip-shape design; and the nano wire is connected between the tips of the source and the drain. The invention also relates to a manufacturing method of the transistor.

Description

technical field [0001] The invention relates to a transistor and a manufacturing method thereof. Background technique [0002] At present, flexible electronics in display technology is one of the future development trends. However, traditional thin-film transistors will limit the flexibility, and general polycrystalline semiconductors can only be prepared on glass substrates due to high growth temperatures. Therefore, if single crystals can be imported Materials used as electron and hole transport channels will have very competitive potential. [0003] Nanowires have a very high surface to volume ratio (surface to volume ratio). This one-dimensional structure has special performance compared with two-dimensional traditional thin films in terms of surface characteristics, mechanical properties, photoelectricity and quantum effects, so it varies with materials. Various related applications have also been derived, such as: gas sensors, field effect transistors, and light-emitt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
Inventor 许嘉麟
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD
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