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Silicon refining device and method

A technology of purification device and heating device, applied in chemical instruments and methods, methods of chemically changing substances by atmospheric pressure, silicon compounds, etc. Effect

Inactive Publication Date: 2012-05-23
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] The inventor is using Figure 5 The shown experimental device for silicon purification including the crucible 10, the heat preservation member 50 and the heating device 30, and the study of the silicon purification (dephosphorization) process carried out by the vacuum purification method have found the following problems: In such a conventional heat preservation member In the structure and arrangement, the heat release from the molten silicon cannot be effectively suppressed, and a temperature difference occurs in the upper and lower directions of the crucible

Method used

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  • Silicon refining device and method
  • Silicon refining device and method
  • Silicon refining device and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0051] figure 1 It is a schematic cross-sectional view showing an example of the silicon purification device according to the first embodiment. In the silicon purification apparatus 100 of Embodiment 1, there are in a decompression container (not shown in the figure): a crucible 1 capable of holding molten silicon; Heating device 3 for heating.

[0052] The above-mentioned crucible 1 only needs to have heat resistance capable of holding molten silicon, and for example, a carbon crucible can be used. Such as figure 1 As shown, the crucible 1 of the present invention is provided with a first heat insulating material 4 covering the outer peripheral portion of the side surface of the crucible 1 . The first heat insulating material 4 can be used without limitation as long as it has heat insulating properties.

[0053] A thermal insulation cover 5 is disposed above the crucible 1 . This thermal insulation cover 5 has a carbon composite material 501 a and a carbon composite ma...

Embodiment approach 2

[0059] figure 2 It is a schematic cross-sectional view showing an example of a silicon purification device according to the second embodiment. Due to the structure other than the configuration of the insulation cover and figure 1 The silicon purification apparatus 100 shown is the same, so descriptions of duplicated parts are omitted.

[0060] The silicon purification device 200 according to Embodiment 2 is a silicon purification device in which the second heat insulating material 7 is provided on the upper surface of the crucible 1 so that the upper surface of the crucible 1 does not come into direct contact with the thermal insulation cover 5 . The carbon composite material 501 a on the crucible-side main surface of the thermal insulation cover 5 is provided so as to indirectly cover the upper surface of the first heat insulating material 4 .

[0061] By disposing the second heat insulating material 7 on the upper part of the crucible 1, the phenomenon listed in the abov...

Embodiment approach 3

[0066] Figure 3A and Figure 3B It is a schematic cross-sectional view showing an example of a silicon purification device according to the third embodiment. Due to the structure other than the configuration of the insulation cover and figure 2 The silicon purification apparatus 200 shown is the same, so descriptions of duplicated parts are omitted.

[0067] The silicon purification apparatus 300 according to Embodiment 3 is a silicon purification apparatus characterized in that the thermal insulation cover 5 has a protruding portion 8 positioned at the opening of the crucible 1 in a state where the heat preservation cover 5 is installed on the upper surface of the crucible 1 . 6 inside the inner wall, the protruding part 8 has a carbon composite material 801 on at least one side of the molten silicon, and the protruding part 8 is arranged in a state of being placed on the upper surface of the crucible 1 so that the lowermost part of the protruding part 8 ( Figure 3A and...

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Abstract

Disclosed is a silicon refining device, wherein a crucible (1) that can hold molten silicon (2), a heat retention lid (5) that can be positioned atop the crucible (1), and a heating device (3) for heating the molten silicon (2) are provided in a decompression container. The device is characterized in that: a first thermal insulation material (4) is provided on the outer periphery of the side surface of the crucible (1); the heat retention lid (5) comprises a plate-like member (502) made from carbon felt, has carbon composite materials (501a, 501b) on at least both main surfaces thereof, and is provided with an opening (6) that penetrates both main surfaces; and the carbon composite material (501a), which is on the main surface of the heat retention lid (5) facing the crucible (1), is positioned to cover the upper surface of the first thermal insulation material (4) when the heat retention lid (5) is placed atop the crucible (1).

Description

technical field [0001] The invention relates to a silicon purification device and a silicon purification method. Background technique [0002] Due to environmental problems, the use of natural energy as an alternative to petroleum or the like has attracted attention. Among them, a solar cell utilizing a photoelectric conversion principle of a silicon semiconductor has a feature of being able to easily convert solar energy into electricity. However, in order to achieve popularization and expansion of solar cells, it is necessary to reduce the cost, especially the cost of semiconductor silicon. [0003] High-purity silicon used in semiconductor integrated circuits, etc. is a material that uses metal silicon with a purity of about 98% to 99% obtained by carbon reduction of silicon dioxide as a raw material, and chemically synthesizes trichlorosilane (SiHCl 3 ), and purify the trichlorosilane by distillation, and then reduce it to obtain about 11N (99.999 999 999%) high-purity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
CPCC01B33/037B01J19/24B01J3/00
Inventor 松本将之南野隆二杉冈亮一北条美穗山根聪肥后辉明
Owner SHARP KK