A chemical mechanical polishing cleaning solution
A technology of chemical machinery and cleaning liquid, which is applied in the direction of chemical instruments and methods, organic non-surface-active cleaning compositions, detergent compositions, etc., can solve problems affecting the process, improve product yield, reduce residue, reduce Effect of Silicon Surface Roughness
Active Publication Date: 2015-12-02
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
After the silicon is removed, various residues are left on the surface, which seriously affects the next process
Method used
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Embodiment 1～21
[0016] Table 1 shows the polishing and cleaning solutions 1-21 of the present invention. The formulations in the table are mixed evenly with each component, and deionized water makes up 100% of the mass of the polishing and cleaning solution. Finally, use a pH regulator (20wt% KOH or dilute HNO 3 , select according to the needs of the pH value) to adjust to the required pH value, continue to stir until a uniform fluid, and let it stand for 30 minutes to obtain various chemical mechanical polishing cleaning solutions.
[0017] Table 1 Polishing cleaning solution 1~21 formula of the present invention
[0018]
[0019]
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The invention discloses a chemical-mechanical polishing cleaning solution used for polishing of 3D (three dimensionally) encapsulated TSV (through silicon via) silicon. The chemical-mechanical polishing cleaning solution contains one or a plurality of organic acids, and one or a plurality of nitrogen-containing compounds, as well as water. The chemical-mechanical polishing cleaning solution of the invention is a novel cleaning solution able to effectively clean a silicon substrate under an alkaline condition, and can substantially improve the yield rate of 3D encapsulated TSV silicon polishing.
Description
technical field [0001] The present invention relates to a chemical mechanical polishing cleaning solution, more specifically, the present invention relates to a chemical mechanical polishing cleaning solution for 3D packaging TSV silicon polishing. Background technique [0002] Typical cleaning solutions include deionized water, hydrogen peroxide solution and dilute ammonia water. They are mainly used to clean the residual liquid in the previous process. After the process, the remaining de-strength photoresist liquid and the residual liquid after the deposition process, etc. After the previous process residue is cleaned, there may still be some organic residues introduced by the cleaning solution on the metal surface, which will affect the next process, or the corrosion of the metal surface will still exist, and the corrosion of the metal surface will affect the flatness and quality of the metal surface. Keeping defect levels high reduces product yield and yield. Therefore...
Claims
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IPC IPC(8): C11D7/26C11D7/32H01L21/02
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD