Resist removal process cavity and resist removal method for semiconductor silicon wafer
A process chamber, semiconductor technology, used in cleaning methods using liquids, semiconductor/solid state device manufacturing, chemical instruments and methods, etc., to achieve the effect of good process conditions
Active Publication Date: 2012-06-13
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF3 Cites 10 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0005] The purpose of the present invention is to propose a semiconductor silicon chip deglue process chamber and degumming method, to solve the negative impact of wet cleaning in the same process chamber on dry degumming
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0028] The degumming process chamber and degumming method for semiconductor silicon wafers proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.
[0029] Please refer to figure 1 , figure 1 Shown is a schematic cross-sectional view of the chamber structure of the deglue process of the semiconductor silicon wafer according to the preferred embodiment of the present invention. The present invention provides a semiconductor silicon chip deglue process chamber, one end of the process chamber 11 has a lifting platform 12, and the other end of the process chamber...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a resist removal process cavity for a semiconductor silicon wafer. A lifting platform is arranged at one end in the process cavity. A protective cover is fixed at the other end in the process cavity. The protective cover and the lifting platform can form a closed structure. The silicon wafer is fixed above the lifting platform. A plasma generation device is arranged in the protective cover. A movable cover plate is also arranged in the process cavity, can be arranged above the lifting platform, and can cover the silicon wafer. One or more inlets are formed in the movable cover plate. The invention also provides a resist removal method for the semiconductor silicon wafer. According to the resist removal process cavity and the resist removal method for the semiconductor silicon wafer, a plasma ashing process and a wet cleaning process for the silicon wafer are performed in different spaces in the process cavity by the lifting platform, the protective cover and the movable cover plate in the process cavity, so that the influence of the residual moisture of the wet cleaning process on the plasma ashing process can be avoided.
Description
technical field [0001] The invention relates to the technical field of integrated circuit technology, in particular to a semiconductor silicon chip degumming chamber and degumming method. Background technique [0002] With the continuous progress of integrated circuit manufacturing technology, the volume of semiconductor devices is becoming smaller and smaller, which also leads to very small particles becoming enough to affect the manufacturing and performance of semiconductor devices, so the silicon wafer cleaning process has also become more and more important. [0003] In all cleaning steps, due to the implantation or etching process, a carbonized hard shell is formed on the surface of the photoresist, which is difficult to remove by conventional wet cleaning methods. Photoresist stripping is the most difficult step. A common method is to first treat the photoresist with oxygen plasma, and then use a wet cleaning process to remove the residual photoresist. For 130nm an...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/02B08B3/04
Inventor 张晨骋
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT