Method for measuring Young modulus of inlaid thin film

Abstract

The invention belongs to the technical field of detection of physical characteristics of a material and relates to a method for measuring a Young modulus of an inlaid thin film. The method comprises the following steps of: (1) establishing a simulation model of the inlaid thin film and a silicon substrate; (2) determining parameters of the inlaid thin film and the silicon substrate; (3) determining boundary conditions of the inlaid thin film and the silicon substrate; (4) drawing a theoretical frequency dispersion curve by using a finite element method when a series of inlaid thin film substrates have different Young modulus; (5) measuring an actual frequency dispersion curve of the inlaid thin film of a sample to be detected; and (6) matching the measured actual frequency dispersion curve of the inlaid thin film of the sample to be detected with the theoretical frequency dispersion curve to obtain the Young modulus of the inlaid thin film. With the adoption of the method provided by the invention, the Young modulus of a dielectric medium material can be rapidly and accurately measured without losses, thereby solving the problem that the traditional method cannot measure the Youngmodulus of the dielectric medium material in an inlaid structure thin film.

Description

technical field [0001] The invention belongs to the technical field of material physical characteristic detection, and in particular relates to a method for measuring the Young's modulus of an inlaid thin film. Background technique [0002] The dispersion characteristics of the surface wave propagating on the film carry a lot of information about the physical properties of the film and the substrate, which can be used to characterize the physical properties of the film, such as the Young's modulus of the film. Young's modulus is an important parameter to characterize the physical properties of thin film materials. With the continuous development of integrated circuits, the feature size of integrated circuits has been continuously reduced, and the semiconductor industry has entered the deep submicron era. The biggest obstacle, so the low dielectric constant (low-k) dielectric began to replace the previous dielectric materials (such as SiO 2 ) is widely used, the dielectric c...

AI Technical Summary

Problems solved by technology

At present, theoretical calculation methods can be used to calculate the theoretical dispersion curve of surface waves in single-layer or multi-layer thin-film structures, but this method cannot calculate the theoretical dispersion curve of surface waves propagating on mosaic thin-film structures, and cannot measure mosaic thin-film structures. Young's Modulus of Structural Dielectric Materials

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