Check method of photomask diagram position deviation

Abstract

The invention provides a check method of photomask diagram position deviation, wherein the method comprises the following steps of: S100. preparing a test wafer; S101. preparing a standard photomask; S102. testing the diagram position deviation of all nested mark outer frames on the standard photomask; S103. placing tested mark inner frames on the product photomask, wherein the central position of each tested mark inner frame needs to be overlapped with the positions of the nested mark outer frames on the standard photomask, and the tested mark inner frames are only placed in a scribing groove or out of a prohibited area; S104. gluing the test wafer, carrying out para-position exposure by utilizing the standard photomask firstly, then carrying out para-position exposure by utilizing the product photomask, and developing after exposure twice and generating nested test diagrams; and S105, testing and nesting, and amending the nested data, thereby obtaining the diagram position deviation of the product photomask. According to the invention, the diagram position deviation of the photomask can be calculated without using a special diagram position deviation check device, and the cost is lower.

Description

【Technical field】 [0001] The invention relates to a method for checking the position deviation of photolithographic plate patterns, and relates to a semiconductor production process. 【Background technique】 [0002] The production process of the lithography plate can be summed up simply. The lithography plate manufacturer converts the data file (commonly used format such as GDS: Gaphic Data System) provided by the customer into the format file used by its plate-making equipment (such as MEBES format, Manufacturing Electron-Beam Exposure System), and then generate graphics on the photolithography plate. like figure 1 As shown, each figure on the photoresist plate (including the designated position 12 of the data file and the actual position 11 of the figure on the photoresist plate) is relative to a reference figure 10 (a figure on the photoresist plate overlaps with the data file as a measurement reference figure) The difference between the position distance and the GDS / MEB...

AI Technical Summary

Problems solved by technology

The detection of pattern deviation requires special equipment, which is only equipped in photolithographic plate production factories. Due to the high cost of equipment, ordinary semiconductor integrated circuit manufacturers do not have equipment for detecting pattern deviation of photolithographic plates, so there is no effective way to check the pattern of photolithographic plates Position deviation; In addition, a set of photolithography plates of the same product may be produced by different equipment of the same photolithography plate manufacturer, or may be produced by another manufacturer for other reasons. The graphic position deviation of each photolithography plate may further cause various Overlay deviation at the lithography level leads to no or reduced product yield

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