Unlock instant, AI-driven research and patent intelligence for your innovation.

Array substrate forming method

A technology of array substrates and substrates, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problems of easy sticking back of the coating and plugging tubes, etc.

Active Publication Date: 2012-07-04
INNOLUX CORP +1
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, general TFT mass production equipment is not suitable for the substrate containing photoresist to enter the deposition chamber for processing, and the stripped coating film is also easy to stick back to the substrate to form defects
On the other hand, the coating film on the photoresist may be suspended in the photoresist removal solution, causing plugging

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate forming method
  • Array substrate forming method
  • Array substrate forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The examples in the following description describe how to form and use thin film transistors. It must be understood that these embodiments provide various feasible inventive concepts and can be applied in various specific contexts. The specific embodiments are intended merely to illustrate specific ways to make and use the embodiments, and do not limit the scope of the inventions.

[0034] Such as Figure 1A As shown, a conductive pattern 12 is formed on the substrate 10 . The substrate 10 can be a rigid inorganic material that is transparent (such as glass, quartz, or the like) or opaque (such as a wafer, ceramics, or the like), or can be plastic, rubber, polyester, or polycarbonate, etc. Flexible organic material. In some embodiments, the substrate 10 is made of a light-transmitting material, and the finally formed thin film transistor can be applied to a transmissive, reflective liquid crystal display, or a self-luminous display. In other embodiments, the substrat...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an array substrate forming method, which can replace the existing lift-off process on the premise that the number of masks is not increased. The method is characterized in that a multi-section adjustable mask is matched with a photoetching process to enable a pattern photoresist layer formed on a protection layer to have a photoresist-free region, a thin-layer photoresist pattern and a thick-layer photoresist pattern; the protection layer of the photoresist-free region is removed to form contact holes to respectively expose the drain electrode of a thin film transistor and the upper electrode of a storage capacitor; then the thin-layer photoresist pattern is ashed to expose the protection layer of a pixel region; and finally conducting layers are selectively deposited on the exposed protection layers and the bottoms and the side walls of the contact holes, and the residual thick-layer photoresist pattern is removed.

Description

technical field [0001] The present invention relates to the process of liquid crystal display, especially to the formation method of its array substrate. Background technique [0002] At present, making an array substrate of a liquid crystal display generally requires as many as four to five photolithography processes, that is, four to five masks are required. If a three-pass mask process is to be used, a lift-off process is required. In the lift-off process, a photoresist is first formed as a coating sacrificial layer. Then deposit a coating film on the photoresist and the area not covered by the photoresist, and then immerse the substrate in the photoresist stripping solution. With the removal of the photoresist, the coating film on the photoresist can be stripped to achieve the process purpose of saving masks. However, general TFT mass production equipment is not suitable for allowing the substrate containing photoresist to enter the deposition chamber for processing, ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/77H01L21/027
Inventor 周政旭
Owner INNOLUX CORP