Light-emitting device and producing method thereof

A technology for a light-emitting device and a manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of lead shielding light, lead disconnection, time required for assembling leads, etc. The effect of taking out efficiency

Inactive Publication Date: 2012-07-04
TOYODA GOSEI CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are problems in that the lead wires block light, it takes time to assemble the lead wires, and the positioning accuracy is p

Method used

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  • Light-emitting device and producing method thereof
  • Light-emitting device and producing method thereof
  • Light-emitting device and producing method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0030] [Example 1]

[0031] figure 1 It is a figure which shows the structure of the light-emitting device of Example 1. The light-emitting device is composed of a face-up type light-emitting element 1 composed of a group III nitride semiconductor, and a submount 2 composed of AIN.

[0032] The light-emitting element 1 has a sapphire substrate 10 on which an n-type layer 11, a light-emitting layer 12, and a p-type layer 13 made of a group III nitride semiconductor are formed in this order. The structures of the n-type layer 11 , the light-emitting layer 12 , and the p-type layer 13 may be any structures known in the related art as structures of light-emitting elements. The n-type layer 11 has a structure in which, for example, an n-type contact layer made of GaN in which Si is embedded in a high concentration and an n cladding layer made of GaN are stacked in this order from the sapphire substrate 10 side. The light-emitting layer 12 has, for example, an MQW structure in wh...

Example Embodiment

[0047] [Example 2]

[0048] Figure 5 It is a figure which shows the structure of the light-emitting device of Example 2. FIG. The light-emitting device of Example 2 is a light-emitting device in which two light-emitting elements 1a and 1b are mounted on the sub-mounting base 200 and the two light-emitting elements 1a and 1b are connected in series. The structures of the light-emitting elements 1a and 1b are the same as those of the light-emitting element 1 of the first embodiment.

[0049] Secondary installation abutment 200 such as Figure 5 As shown, four through-holes 201a-d are provided, and rod-shaped electrodes 202a-d are inserted into the through-holes 201a-d, respectively, and are supported and erected. The rod-shaped electrodes 202a and b are provided in the mounting region of the light-emitting element 1a at positions opposite to the p-pad electrode 16 and the n-pad electrode 14 of the light-emitting element 1a (in a plan view, the p-pad electrode 16 and the n-pa...

Example Embodiment

[0053] [Example 3]

[0054] Image 6 It is a figure which shows the structure of the light-emitting device of Example 3. FIG. The light-emitting device of Example 3 is constituted by the light-emitting element 300 having a vertical structure and the sub-mounting base 400 .

[0055] The light-emitting element 300 has a GaN substrate 301 on which an n-type layer 302, a light-emitting layer 303, and a p-type layer 304 composed of a group III nitride semiconductor are stacked in this order. An ITO electrode 305 is formed on the p-type layer 304 , and a p-pad electrode 306 is formed on the ITO electrode 305 .

[0056] The light emitting element 300 is provided with a through hole 307 penetrating in a direction perpendicular to the element surface from the surface of the p-pad electrode 306 to the back surface 301 a of the GaN substrate 301 (the surface opposite to the side where the n-type layer 302 is formed). . An insulating film 308 for preventing current leakage and short c...

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PUM

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Abstract

The invention provides a light-emitting device. A light-emitting element facing upwards is disposed on a secondary mounting base, and the mounting does not require leads and is conducted with high position accuracy. The light-emitting device comprises a light-emitting element (1) facing upwards and a secondary mounting base (2). The light-emitting element (1) facing upwards is composed of III-group nitride semiconductor and is provided with through holes (17, 18). The secondary mounting base (2) has two rod-like electrodes (22) which are respectively inserted into the through holes (17, 18) of the light-emitting element (1). A front end part (22a) of the rod-like electrode (22) protrudes from the surface of a n pad electrode (14) and p pad electrode (16) of the light-emitting element (1), and is flattened and expanded, and is connected to the n pad electrode (14) and the p pad electrode (16) of the light-emitting element (1).

Description

technical field [0001] The present invention relates to a light-emitting device in which a light-emitting element is mounted on a sub mount and a manufacturing method thereof, and particularly relates to a light-emitting device mounted with high positional accuracy without using leads and a manufacturing method thereof . Background technique [0002] In the face-up type light emitting element, currently, it is mounted on the submount by wire bonding. However, there are problems in that the lead wires block light, it takes time to assemble the lead wires, and the positioning accuracy is poor. In addition, problems such as disconnection or detachment of lead wires may occur due to thermal expansion of the sealing resin or the like. [0003] As a method of mounting a face-up light emitting element by a method other than wire bonding, there is the method of Patent Document 1. Patent Document 1 describes a method of providing two through holes penetrating through an n-electrod...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/38
Inventor 矢羽田孝辅户谷真悟守山实希关根重信
Owner TOYODA GOSEI CO LTD
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