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Chromium-doped barium strontium titanate ceramic capacitor material

A ceramic capacitor, strontium barium titanate technology, applied in the field of chromium-doped strontium barium titanate ceramic capacitor materials, can solve the problems of high dielectric loss

Inactive Publication Date: 2012-07-11
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AI Technical Summary

Problems solved by technology

For BsT materials, high dielectric loss is an important reason that limits their application in the microwave field

Method used

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Embodiment Construction

[0004] 1. In the solid state reaction, a small amount of cr enters the BST lattice to form a solid

[0005] solution, maintaining its cubic perovskite structure. A small amount of Cr doping can promote grain growth, but when the doping amount is high, the grain size decreases and becomes uneven.

[0006] 2. When the Cr doping amount (mole fraction) ＜ When the doping amount is 1.0%, the dielectric tuning performance and dielectric loss of BST ceramics are improved. When the doping amount is 0.6%, its comprehensive performance is the best, and the loss at 1MHz can be reduced to 5×10 -4 Below, its FoM value can reach 500.

[0007] 3. The significant reduction in the dielectric loss of low-concentration Cr-doped BST ceramics can be attributed to the Cr 3 + ion reduction and Cr 3 + and Cr 2 The acceptor behavior of + ions effectively suppresses the Ti 4+ The price change; and a small amount of Cr doping will not cause larger lattice and structural defects and lead to an increa...

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Abstract

The invention provides a chromium-doped barium strontium titanate ceramic capacitor material, mainly comprising the following characteristics: small amount of Cr enters BST (barium strontium titanate) crystal lattices in a solid phase reaction to form a solid solution and keep a cubic perovskite structure; and small amount of doped Cr can promote the growth of crystal, while the crystal becomes small and non-uniform when the doping amount is high; when the Cr doping amount (mole percentage) is less than 1.0%, the dielectric turning performance and the dielectric loss of the BST ceramics are both improved; when the doping amount is 0.6%, the comprehensive performance is the best, the loss can be reduced to less than 5*1 / 10<-4> and the FOM ( figure of merit) value can reach 500 under 1MHz; the dielectric loss of the BST ceramics is reduced notably after Cr with a low-concentration is doped, because reduction of Cr3+ ion and a recipient behavior of Cr2+ ion effectively inhibit valence alternation of Ti4+; in addition, small amount of doped Cr cannot cause big crystal lattices and structure defects which increase loss.

Description

technical field [0001] The invention relates to a capacitor material, in particular to a chromium-doped barium strontium titanate ceramic capacitor material. Background technique [0002] At present, Cr-doped barium strontium titanate (Ba 0.6 Sr 0.4 TiO 3 , BST) ceramic dielectric and its adjustable properties. The results show that a small amount of Cr can enter the BST lattice to form a solid solution and promote grain growth. When the Cr doping amount (mol fraction) is lower than 1.0%, The dielectric loss of ceramics decreases sharply, the tuning rate is significantly improved, and the overall performance is significantly improved. Among them, BST ceramics doped with 0.6% Cr has the best overall performance, and its dielectric loss at 1MHz is 0.0005, and the quality factor (FoM) reached 500, while the FoM value of the undoped sample was only 60. The sharp decrease in the loss of Cr-doped ceramics can be attributed to the Cr 3 Reduction of + ions and Cr 3 +Cr 2 + The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/468H01G4/12
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