Metal organic vapor phase deposition device

A vapor deposition, metal organic technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problems of uneven film, low film speed, etc., to achieve the effect of improving uniformity

Active Publication Date: 2012-07-11
ADVANCED MICRO FAB EQUIP INC CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, the film formed by the existing metal organic chemical vapor

Method used

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  • Metal organic vapor phase deposition device

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Embodiment Construction

[0040] When using the existing metal-organic chemical vapor deposition device for thin film deposition process, the rotation speed of the base cannot be increased, and it is in a low speed state of less than 500RPM, the formation rate of the film is low, and the film formed in the central area of ​​the base is uneven.

[0041] The inventors have found through research that the non-uniform film formed in the central area of ​​the base at low rotational speed is caused by thermal convection eddies, which are caused by the temperature between the spray assembly and the base Poor, resulting in thermal convection of the gas to form a vortex, causing the reaction gas to fall back from the edge of the susceptor to the central area of ​​the susceptor, resulting in uneven film.

[0042] In existing metal organic chemical vapor deposition devices, the distance from the spray assembly to the base varies according to the specific process requirements. When the process requires that the dis...

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Abstract

The invention relates to a metal organic vapor phase deposition device which comprises a reaction chamber, a base and a spraying component, wherein the base is arranged at the bottom of the reaction chamber; the spraying component is arranged at the top of the reaction chamber; the spraying component comprises a central air inlet device and a peripheral air inlet device encircling the central air inlet device; the central air inlet device is used for allocating a first gas at a first flux to an area between the central air inlet device and the base; the peripheral air inlet device is used for allocating a second gas at a second flux to a peripheral area of the reaction chamber; the first and second gases are carrier gas, III metallic organic source gas and V hydride source gas; the III metallic organic source gas and the V hydride source gas in the first and second gases respectively have a first flow ratio and a second flow ratio; and the first flow ratio is different from the second flow ratio. The metal organic vapor phase deposition device is used for increasing the uniformity and forming rate of a film.

Description

technical field [0001] The invention relates to the technical field of chemical vapor deposition, in particular to a metal organic vapor deposition device. Background technique [0002] Chemical vapor deposition (Chemical vapor deposition, referred to as CVD) is a chemical reaction of reacting substances under gaseous conditions, and the formation of solid substances is deposited on the surface of a heated solid substrate to obtain solid materials. It is realized by chemical vapor deposition equipment. . Specifically, the CVD device feeds the reaction gas into the reaction chamber through the gas inlet device, and controls reaction conditions such as pressure and temperature of the reaction chamber, so that the reaction gas reacts, thereby completing the deposition process steps. In order to deposit the desired film, it is generally necessary to feed a variety of different reactive gases into the reaction chamber, and it is also necessary to feed other non-reactive gases su...

Claims

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Application Information

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IPC IPC(8): C23C16/44C23C16/455
Inventor 周宁何乃明范文远
Owner ADVANCED MICRO FAB EQUIP INC CHINA
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