A metal anti-corrosion cleaning solution
A metal anti-corrosion and cleaning liquid technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of unfriendly environment, toxic substances, narrow cleaning use range, etc., to reduce defects, improve surface quality, The effect of preventing global and localized corrosion
Active Publication Date: 2016-12-07
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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Problems solved by technology
However, the cleaning solution in the above-mentioned patent either contains toxic substances and is not friendly to the environment; or the cleaning efficiency is not high enough; or the cleaning application range is narrow, for example, the cleaning solution of the US6443814 patent can only clean wafers containing copper metal layers
Method used
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Embodiment 1～52
[0022] Table 1 shows Examples 1-52 of the cleaning solution of the present invention. According to the formula given in the table, the components are mixed evenly, and the mass percentage is made up to 100% with water. with KOH or HNO 3 Adjust to desired pH.
[0023] Table 1 Examples 1-52
[0024]
[0025]
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The invention discloses a cleaning solution for metal corrosion resistance. The cleaning solution for metal corrosion resistance contains at least one phosphate surfactant. The cleaning solution for metal corrosion resistance can prevent corrosion or corrosive pitting of metal in cleaning, and effectively remove polishing residues.
Description
technical field [0001] The invention relates to an anti-corrosion cleaning solution for metal. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. Contaminants consisting of particles of polishing slurry, chemical additives, and reaction products of the polishing process remain on the surface of the wafer after chemical mechanical planarization. These contaminants must be cleaned before proceeding to the next step to avoid degrading device reliability. For metal materials, it is also necessary to protect the metal surface from corrosion during the cleaning process, avoiding defects and degrading the performance of semiconductor...
Claims
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IPC IPC(8): C23G1/00H01L21/02
Inventor 张建荆建芬蔡鑫元
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD