Method for preparing ferromagnetic single-crystal film with ultra-large vertical coercivity
A technology of single crystal thin film and ferromagnetic thin film, which is applied in the field of preparation of ferromagnetic single crystal thin film with super large vertical coercive force, to achieve the effect of superior ferromagnetic properties at room temperature
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[0023] see figure 1 As shown, the present invention is a method for preparing ferromagnetic materials with super large coercive force and super high perpendicular anisotropy, comprising the steps of:
[0024] Step 1: Put the substrate 1 into the sample rack of the molecular beam epitaxy equipment, and the material of the substrate 1 is GaAs.
[0025] Step 2: Elevate the substrate 1 to a predetermined temperature, and maintain the temperature for a predetermined time, the temperature of the substrate 1 is raised to 560-800°C, and maintain the temperature for not less than 1 minute.
[0026] Step 3: Lower the temperature of the substrate 1 to a predetermined temperature, and then use the molecular beam epitaxy technique to grow the buffer layer 2 on the substrate 1. It can be seen from the reflective high-energy electron diffraction equipment that the grown growth buffer layer 2 is High quality single crystal. The cooling temperature of the substrate 1 is 500-760° C., and the ...
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