Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing ferromagnetic single-crystal film with ultra-large vertical coercivity

A technology of single crystal thin film and ferromagnetic thin film, which is applied in the field of preparation of ferromagnetic single crystal thin film with super large vertical coercive force, to achieve the effect of superior ferromagnetic properties at room temperature

Active Publication Date: 2013-12-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Up to now, there is no report of a perpendicular easily magnetizable material that can simultaneously possess a ferromagnetic thin film with super large coercive force, super high perpendicular magnetic anisotropy and super high magnetic energy product, compatible with the current very mature semiconductor process, easy to integrate, It does not contain precious metals or rare earth elements, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing ferromagnetic single-crystal film with ultra-large vertical coercivity
  • Method for preparing ferromagnetic single-crystal film with ultra-large vertical coercivity
  • Method for preparing ferromagnetic single-crystal film with ultra-large vertical coercivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0023] see figure 1 As shown, the present invention is a method for preparing ferromagnetic materials with super large coercive force and super high perpendicular anisotropy, comprising the steps of:

[0024] Step 1: Put the substrate 1 into the sample rack of the molecular beam epitaxy equipment, and the material of the substrate 1 is GaAs.

[0025] Step 2: Elevate the substrate 1 to a predetermined temperature, and maintain the temperature for a predetermined time, the temperature of the substrate 1 is raised to 560-800°C, and maintain the temperature for not less than 1 minute.

[0026] Step 3: Lower the temperature of the substrate 1 to a predetermined temperature, and then use the molecular beam epitaxy technique to grow the buffer layer 2 on the substrate 1. It can be seen from the reflective high-energy electron diffraction equipment that the grown growth buffer layer 2 is High quality single crystal. The cooling temperature of the substrate 1 is 500-760° C., and the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for preparing a ferromagnetic single-crystal film with ultra-large vertical coercivity, comprising the following steps: (1) putting a substrate into a molecular-beam epitaxy equipment sample bracket; (2) increasing the temperature of the substrate to a predetermined temperature, and preserving the temperature for a predetermined time; (3) decreasing the temperature of the substrate to a predetermined temperature, and growing a buffer layer on the substrate by adopting the molecular-beam epitaxy technology; and (4) cooling the substrate to a predetermined temperature, and growing a ferromagnetic thin film layer on the substrate by adopting the molecular-beam epitaxy technology. The ferromagnetic single-crystal film prepared by adopting the method has ultra-large vertical coercivity, ultra-high perpendicular magnetic anisotropy and ultra-high magnetic energy product, is prepared in simple processes, is easy to integrate and does not contain precious metals and rare earth elements.

Description

technical field [0001] The invention relates to the technical fields of ultra-high-density magneto-optical storage, magnetic storage, high-sensitivity magnetic sensors, high-performance permanent magnets, etc., in particular to a preparation method of a ferromagnetic single-crystal thin film with super large vertical coercive force. Background technique [0002] In recent years, with the rapid development of information technology, the requirements for information storage density and storage speed have been increasing. In order to further increase the recording density of magneto-optical disks, magnetic disks, etc., the size of the magnetic unit in the recording medium must be reduced to less than 10nm, and at such a small size, the traditional horizontal recording mode has encountered an insurmountable limit - due to thermal disturbances. superparamagnetic effect. To overcome this limit, a perpendicular recording mode based on new materials with high perpendicular magnetic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01F41/14
Inventor 赵建华朱礼军
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products